Datasheet

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11. Electrical Specifications
DC Characteristics
The DC specifications are provided in Table 33 through Table 36.
Table 33: Absolute Maximum Ratings
Parameter Value Parameter Value
LDO Input Voltage -0.5 V to 3.6 V ESD Pad Protection 2 kV
VDD Voltage -0.5 V to 1.26 V Laminate Package (BGA)
Storage Temperature
–55°C to + 125°C
AVDD/VDDIO Voltage -0.5 V to 3.6 V
Input Voltage -0.5 V to 3.6 V Latch-up Immunity ±100 mA
WARNING: The absolute maximum ratings may cause permanent damage to the EOS S3 platform. Functional operation
of the device should follow the recommended operating range in the following table.
Table 34: Recommended Operating Range
Symbol
Parameter
a, b, c, d, e
Min. Typ. Max. Unit
LDO1_VIN LDO1 input voltage 1.62 3.6 V
LDO1 analog current consumption –
maximum output current set to:
LDO1_I 50 mA 30 µA
8 mA 10
1 mA 6
LDO2_VIN LDO2 input voltage 1.62 3.6 V
LDO2 analog current consumption –
maximum output current set to:
LDO2_I 30 mA 20 µA
8 mA 10
1 mA 6
VDD1 Memory (LDO1_OUT) Supply voltage during active mode 0.95 1.1 1.21 V
Supply voltage during initialization 1.05 1.1 1.21 V
VDD2 Logic (LDO2_OUT) Supply voltage during active mode 0.95 1.1 1.21 V
Supply voltage during initialization 1.05 1.1 1.21 V
VCCIO Input tolerance voltage 1.71 - 3.6 V
T
J
Ambient temperature –20 25 85 °C
AVDD Analog voltage 1.71 - 3.6 V
XTAL_IN Crystal input - 32.768 - kHz
XTAL_IN Low Level CMOS input low level 0.3 - 0.35 V
XTAL_IN High Level
CMOS input high level
f
0.80 -
3.4
g
V