Data Sheet

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TB6612FNG

2007-06-30

Toshiba Bi-CD Integrated Circuit Silicon Monolithic

T B 6 6 1 2 F N G

Driver IC for Dual DC motor

Features

• Power supply voltage ； VM=15V（Max.）

• Output current ； Iout=1.2A(ave) / 3.2A (peak)

• Output low ON resistor； 0.5Ω (upper＋lower Typ. @VM≧

5V)

• Standby (Power save) system

• CW/CCW/short brake/stop function modes

• Built-in thermal shutdown circuit and low voltage detecting circuit

• Small faced package（SSOP24：0.65mm Lead pitch）

• Response to Pb free packaging

* This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product,

ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive

mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at

reasonable levels.

質量: 0.14 g (標準)

TB6612FNG is a driver IC for DC motor with output

transistor in LD MOS structure with low ON-resistor. Two

input signals, IN1 and IN2, can choose one of four modes

such as CW, CCW, short brake, and stop mode.

The TB6612FNG is a Pb-free product.

The following conditions apply to solderability:

*Solderability

1. Use of Sn-37Pb solder bath

*solder bath temperature = 230°C

*dipping time = 5 seconds

*number of times = once

*use of R-type flux

2. Use of Sn-3.0Ag-0.5Cu solder bath

*solder bath temperature = 245°C

*dipping time = 5 seconds

Summary of content (11 pages)

PAGE 1
TB6612FNG Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6612FNG Driver IC for Dual DC motor TB6612FNG is a driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can choose one of four modes such as CW, CCW, short brake, and stop mode. Features • Power supply voltage ； VM=15V（Max.
PAGE 2
TB6612FNG Block Diagram VM1 24 PWMA AIN2 AIN1 Vcc 23 22 21 20 STBY GND 19 18 BIN1 BIN2 PWMB 17 16 15 VM3 VM2 14 13 11 12 STB Control Logic A Control Logic B UVLO TSD H-SW A 1 AO1 2 3 H-SW B 4 5 AO1 PGND1 PGND1 AO2 6 7 AO2 BO2 8 9 BO2 PGND2 10 PGND2 BO1 BO1 Pin Functions Pin NO.
PAGE 3
TB6612FNG Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating VM 15 Vcc 6 Input voltage VIN -0.2∼6 V IN1,IN2,STBY,PWM pins Output voltage Vout 15 V O1,O2 pins Iout 1.2 Iout (peak) 2 Supply voltage Output current Unit Remarks V Per 1ch A tw=20ms Continuous pulse, Duty≦20% 3.2 tw=10ms Single pulse 0.78 IC only Power dissipation PD 0.89 W Operating temperature Topr -20∼85 ℃ Storage temperature Tstg -55∼150 ℃ 1.36 50×50 t=1.
PAGE 4
TB6612FNG H-SW Control Function Input Output IN1 IN2 PWM STBY OUT1 OUT2 Mode H H H/L H L L Short brake L H H H L H CCW L H L L Short brake H L H H H L CW L H L L Short brake L L H H OFF (High impedance) Stop H/L H/L H/L L OFF (High impedance) Standby H-SW Operating Description ・To prevent penetrating current, dead time t2 and t4 is provided in switching to each mode in the IC.
PAGE 5
TB6612FNG Electrical Characteristics (unless otherwise specified, Ta = 25°C, Vcc=3V, VM=5V） Characteristics Supply current Symbol Control input current Standby input voltage Standby input current Output saturating voltage Output leakage current Regenerative diode VF Low voltage detecting voltage Recovering voltage Thermal shutdown circuit operating temperature Thermal shutdown hysteresis Typ. Max Unit STBY=Vcc=3V, VM=5V --- 1.1 (1.8) Icc(5.5V) STBY=Vcc=5.5V, VM=5V --- 1.5 2.
PAGE 6
TB6612FNG Target characteristics Iout - Duty PD - Ta (w) 1.50 (A) 2.5 ①IC only θj ‒ a＝160℃/W ①IC単体θj-a=160℃/W ③ ②In boarding ②基板実装時 PCB面積 50×50×1.6mm PCB area 50×50×1.6mm 1.00 2.0 Cu箔面積≧40% Cu area≧40% ③基板実装時 ③InPCB面積 boarding 76.2×114.3×1.6mm Cu箔面積≧30% ② 1ch driving 1ch動作時 1.5 PCB area 76.2×114.3×1.6mm Cu area≧30% ① 2ch動作時 2ch driving 1.0 0.50 0.5 Ta=25℃, IC only Ta=25℃,IC単体 0.0 0.
PAGE 7
TB6612FNG Typical Application Diagram +2.7V ∼ 5.5V Vcc C4 0.1uF + C3 10uF STBY 20 UVLO 19 STBY 24 AIN1 21 1 2 AIN2 PWMA 22 Control Logic A H-SW Driver A 23 5 6 3 MCU 4 TSD 13 BIN1 17 14 11 BIN2 PWMB 16 Control Logic B H-SW Driver B 12 7 8 15 9 10 GND Note: VM1 AO1 C2 AO1 0.1uF AO2 + C1 10uF +4.5V ∼ 13.
PAGE 8
TB6612FNG Package Dimennsions Weght: 0.
PAGE 9
TB6612FNG Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Application Circuits The application circuits shown in this document are provided for reference purposes only.
PAGE 10
TB6612FNG Points to remember on handling of ICs (1) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
PAGE 11
TB6612FNG RESTRICTIONS ON PRODUCT USE 070122EBA_R6 • The information contained herein is subject to change without notice. 021023_D • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.