Data Sheet

1087
Atmel | SMART SAM D21 [DATASHEET]
Atmel-42181G–SAM-D21_Datasheet–09/2015
Note: 1. These values are based on characterization. These values are not covered by test limits in production.
A.7 NVM Characteristics
Note that on this flash technology, a max number of 4 consecutive write is allowed per row. Once this number is reached,
a row erase is mandatory.
Table A-32. Flash Endurance and Data Retention
Note: 1. An endurance cycle is a write and an erase operation.
Table A-33. EEPROM Emulation
(1)
Endurance and Data Retention
Notes: 1. The EEPROM emulation is a software emulation described in the App note AT03265.
2. An endurance cycle is a write and an erase operation.
Table A-30. Temperature Sensor Characteristics
(1)
(Device Variant B)
Symbol Parameter Conditions Min. Typ. Max. Units
I
Temperature sensor output
voltage
T= 25 C, V
DDANA
= 3.3V - 0.688 - V
I
Temperature sensor slope 2.06 2.16 2.26 mV/C
I
Variation over V
DDANA
voltage V
DDANA
=1.62V to 3.6V -0.4 1.4 3 mV/V
I
Temperature sensor
accuracy
Using the method described in
section 36.9.8.2
-13.0 - 13.0 C
Table A-31. Maximum Operation Frequency
V
DD
range NVM Wait States Maximum Operating Frequency Units
1.62V to 2.7V
0 14
MHz
1 28
2 40
2.7V to 3.63V
0 24
1 40
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
NVM25k
Retention after up to 25k Average ambient 55°C 10 50 - Years
Ret
NVM2.5k
Retention after up to 2.5k Average ambient 55°C 20 100 - Years
Ret
NVM100
Retention after up to 100 Average ambient 55°C 25 >100 - Years
Cyc
NVM
Cycling Endurance
(1)
-40°C < Ta < 125°C 25k 150k - Cycles
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
EEPROM100k
Retention after up to 100k Average ambient 55 C 10 50 - Years
Ret
EEPROM10k
Retention after up to 10k Average ambient 55 C 20 100 - Years
Cyc
EEPROM
Cycling Endurance
(2)
-40 C < Ta < 125 C 100k 600k - Cycles