Data Sheet

1067
Atmel | SMART SAM D21 [DATASHEET]
Atmel-42181G–SAM-D21_Datasheet–09/2015
Appendix A. Electrical Characteristics at 125°C
A.1 Disclaimer
All typical values are measured at T = 25°C unless otherwise specified. All minimum and maximum values are valid
across operating temperature and voltage unless otherwise specified.
A.2 Absolute Maximum Ratings
Stresses beyond those listed in Table A-1 may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
Note: 1. Maximum source current is 14mA and maximum sink current is 19.5mA per cluster. A cluster is a group of GPIOs as
shown in Table A-3. Also note that each VDD/GND pair is connected to 2 clusters so current consumption through the
pair will be a sum of the clusters source/sink currents.
Note: 1. Maximum source current is 46mA and maximum sink current is 65mA per cluster. A cluster is a group of GPIOs as
shown in Table A-3. Also note that each VDD/GND pair is connected to 2 clusters so current consumption through the
pair will be a sum of the clusters source/sink currents.
Table A-1. Absolute Maximum Ratings (Device Variant A)
Symbol Parameter Condition Min. Max. Units
V
DD
Power supply voltage 0 3.8 V
I
DD
Current into a V
DD
pin - 28
(1)
mA
I
GND
Current out of a GND pin - 39
(1)
mA
V
PIN
Pin voltage with respect to GND
and V
DD
GND-0.3V V
DD
+0.3V V
T
storgae
Storage temperature -60 150 C
Table A-2. Absolute Maximum Ratings (Device Variant B)
Symbol Parameter Condition Min. Max. Units
V
DD
Power supply voltage 0 3.8 V
I
DD
Current into a V
DD
pin - 92
(1)
mA
I
GND
Current out of a GND pin - 130
(1)
mA
V
PIN
Pin voltage with respect to GND
and V
DD
GND-0.3V V
DD
+0.3V V
T
storgae
Storage temperature -60 150 C