Data Sheet

1060
Atmel | SMART SAM D21 [DATASHEET]
Atmel-42181G–SAM-D21_Datasheet–09/2015
41.3 Rev. E – 02/2015
“Power Supply Connections” on page 1008: VDDCORE decoupling capacitor value updated from 100nF to 1µF.
References to AREFA and AREFB replaced with VREFA and VREFB respectively.
“Electrical Characteristics at 125°C” on page 1067:
Added “I2S Timing” on page 1099.
Updated BOD33 characteristics.
Added characterization data for Device Variant B.
“Description” on page 1:
CoreMark score updated from 2.14 to 2.46 CoreMark/MHz.
“Ordering Information” on page 5:
Added Ordering codes for Device Variant B.
Added 125°C ordering codes for QFN and TQFP package options: “SAM D21E” on page 5, “SAM D21G” on page 7
and “SAM D21J” on page 9.
Added WLCSP package option for “SAM D21G” on page 7.
Added UFBGA package option for “SAM D21J” on page 9.
“Pinout” on page 13:
Added pinout figures for “UFBGA64” on page 14 and “WLCSP45” on page 16.
“Product Mapping” on page 28:
Updated Product Mapping figure with Internal RWW section block for Device Variant B.
“Memories” on page 29:
“Physical Memory Map” on page 29: Added start address for Internal Read While Write (RWW) section for Device
Variant B.
“Processor And Architecture” on page 33:
“Configuration” on page 38: Removed green connection dots between DMAC Data and AHB-APB Bridge A and
Bridge B.
“NVMCTRL – Non-Volatile Memory Controller” on page 355:
Introducing Read While Write (RWW) feature for Device Variant B.
Updated and New sections:
“Overview” on page 355
“Features” on page 355
“Block Diagram” on page 355
“NVM Read” on page 359
“RWWEE Read” on page 359
“NVM Write” on page 359
“Erase Row” on page 360
“Memory Organization” on page 357: Figure 21-3 updated.
“Register Summary” on page 363 and “Register Description” on page 364: PARAM: Added RWWEEP[12:0] bits for
Device Variant B.
“PORT” on page 379: