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SP001GBCRU533S01

172pin DDR2 533 Micro DIMM

1. Features

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˙Fast data transfer rates: PC2-4200

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˙172-pin, Dual In-Line Memory module

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˙VDD = VDDQ = +1.8V, VDDSPD = +1.7V to +3.6V

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˙JEDEC standard_1.8V I/O (SSTL_1.8-compatible)

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˙Differential data strobe (DQS, /DQS) option

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˙Four-bit prefetch architecture

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˙DLL to align DQ and DQS transitions with CK

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˙Multiple internal device banks for concurrent operation

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˙Programmable /CAS latency (CL)

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˙Posted /CAS additive latency (AL)

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˙WRITE latency = READ latency - 1 tCK

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˙Programmable burst lengths: 4 or 8

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˙Adjustable data-output drive strength

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˙64ms, 8,192-cycle refresh

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˙On-die termination (ODT)

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˙92ball FBGA Leaded & Pb-Free (RoHS compliant) package

2. Module Specification

Item Specification

Capacity 1024MByte

Physical Bank(s) 1

Module Organization 128M x 64bit

Module Type nonECC

Speed Grade PC2-4200 (DDR2 533)

Voltage Interface SSTL_18

Power Supply Voltage 1.8V ± 0.1V

Burst Lengths 4 or 8

DRAM Organization 128M x 8bit DDR2 SDRAM

PCB Layer 6Layers

Contact Tab 172 pin GOLD Flash Plating

Serial PD Support

Summary of content (4 pages)

PAGE 1
SP001GBCRU533S01 172pin DDR2 533 Micro DIMM 1. Features ˙Fast data transfer rates: PC2-4200 ˙172-pin, Dual In-Line Memory module ˙VDD = VDDQ = +1.8V, VDDSPD = +1.7V to +3.6V ˙JEDEC standard_1.8V I/O (SSTL_1.
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SP001GBCRU533S01 172pin DDR2 533 Micro DIMM 3. Simplified Mechanical Drawing with Keying Positions Notes：1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
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SP001GBCRU533S01 172pin DDR2 533 Micro DIMM 4.
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SP001GBCRU533S01 172pin DDR2 533 Micro DIMM 5. Pin Description SYMBOL TYPE DESCRIPTION Clock: CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of /CK. Output data (DQs and DQS /DQS) is referenced to the crossings of CK and /CK. Command Inputs: /RAS, /CAS and /WE (along with /S) define the command being entered.