Specifications

RF SPUTTERING
If the target is an insulator, the neutralization process results in a positive charge on the target sur-
face. This charge may grow to the point that the bombarding ions (±) are repelled and the sputter-
ing process will stop. In order to make the process continue the polarity of the target must be re-
versed to attract enough electrons from the discharge to eliminate the surface charge. In order to
attract the electrons and not repeal the ions, the frequency must be high enough to reverse before
the direction of the ions are affected. The usual industrial frequency assigned by the FCC for such
is in the MHz range. Since this is a “radio” frequency, the process is called radio frequency sput-
tering, or RF sputtering. Most of the early sputtering was done using direct current sources. This
meant high voltage, with current draw being limited by the gas pressure. Typical voltages were 3-5
kV with a current from 50-250 ma at pressures of 50-250 microns. R.F. power was introduced be-
cause it makes it possible to sputter insulators.
BENEFITS OF THE MAK
SIMPLICITY IN SPUTTERING
Physical Parameters
PICTURE SHOWN IS NOT
TO SCALE
Anode
• Height adjustable to target
thickness - Selectively position-
ing anode to same plane as tar-
get --- obviously minimizing ma-
terial build-up
No Mechanical Target Clamp
• Target surface is not in contact
with dissimilar clamping material
--- minimizing stress during sput-
tering and cool down
• Standard HN power connector
permits RF/DC operation
HN CONNECTOR
Small Profile
• Mounts on CF, ISO or installs thru a
Quick Disconnect
• As example, standard 3” MAK fits thru
opening of 6” CF
One Vacuum Seal
• Elastomer (HV) or Metal (UHV) field
interchangeable
•
No water to Vacuum Seal
VACUUM SEAL
WATER LINES
• Teflon water lines with quick disconnects
Issued September 11, 2008
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