Specifications

In order to increase sputtering rate, magnetic coils were sometimes placed around the chamber to

pinch the plasma during the deposition. The pressure was reduced to 20 microns (2 X 10

-2

torr)

and the rates increased. The electrodes were close together and the R.F. voltage was high.

These conditions caused damage to semiconductor devices due to the high electron and secon-

dary ion bombardment, which took place.

When it was realized how important the role of a magnetic field was in concentrating the plasma

and the effects that it had on rate, sputtering became more attractive as a commercial process.

Several magnetic configurations were used such as the post cathode, magnetically enhanced hol-

low cathodes and magnetrons. In order to make a magnetron work, it is necessary to cause the E

X B drift currents to close on themselves. This realization led to the magnetron cathode designs

that are in use today.

MAK BENEFITS

BENEFIT

F THE MAK

SIMPLICITY IN SPUTTERING

Magnetics

Center Magnet

djustable Anode Set

Screws

Ring Magnet Cathode

Balanced / Unbalanced

• Magnet array is

INTERCHANGEABLE from bal-

anced or unbalanced. Disas-

sembly of source NOT

REQUIRED!

No Magnetic Housing

• Provides higher magnetic den-

sity at target surface

• Sputters at lower voltage for

comparable power levels

• Standard MAK sputters mag-

netic material

Issued September 11, 2008