hardware design v2.00

Table Of Contents
Smart Machine Smart Decision
THD <1% at F=1KHz;
pre-amp gain = 20 dB;
PGA gain = 14 dB
15.9
SIM908_Hardware Design_V2.00 2012.05.07
33
mVrms Differential input
voltage
THD <5% at F=1KHz;
pre-amp gain = 0 dB;
PGA gain = 0 dB
740 mVrms
Table 11: Audio output characteristics
Parameter Conditions Min Typ Max Unit
RL=32
THD=0.1%
- 91 - mW
RL=32
THD=1%
- 96 - mW
Output swing voltage
(single ended)
1.1 Vpp
Normal
Output(SPK)
Output swing voltage
(differential)
2.2 Vpp
4.8 SIM Card Interface
4.8.1 SIM Card Application
The SIM interface complies with the GSM Phase 1 specification and the new GSM Phase 2+ specification for
FAST 64 kbps SIM card. Both 1.8V and 3.0V SIM card are supported. The SIM interface is powered from an
internal regulator in the module.
It is recommended to use an ESD protection component such as ST (www.st.com
) ESDA6V1W5 or ON SEMI
(www.onsemi.com
) SMF05C.The pull up resistor (15K) on the SIM_DATA line is already added in the module
internal. Note that the SIM peripheral circuit should be close to the SIM card socket. The reference circuit of the
8-pin SIM card holder is illustrated in the following figure.
Figure 28: Reference circuit of the 8-pin SIM card holder
Note: The SIM_Presence pin is multiplexing with KBC0 (PIN 34).