User's Manual

SIM7075G User Manual V1.00
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LTE-FDD B19
@21dbm Typical: 147mA
@10dbm Typical: 80mA
@0dbm Typical: 53mA
LTE-FDD B20
@21dbm Typical: 147mA
@10dbm Typical: 81mA
@0dbm Typical: 52mA
LTE-FDD B25
@21dbm Typical: 140mA
@10dbm Typical: 87mA
@0dbm Typical: 54mA
LTE-FDD B26
@21dbm Typical: 147mA
@10dbm Typical: 81mA
@0dbm Typical: 53mA
LTE-FDD B28
@21dbm Typical: 143mA
@10dbm Typical: 81mA
@0dbm Typical: 53mA
LTE-FDD B31
@26dbm Typical: 302mA
@17dbm Typical: 185mA
@8dbm Typical:120mA
LTE-FDD B66
@21dbm Typical: 141mA
@10dbm Typical: 87mA
@0dbm Typical: 53mA
LTE-FDD B71
@21dbm Typical: 133mA
@10dbm Typical: 76mA
@0dbm Typical: 64mA
5.5 ESD Notes
SIM7075G is sensitive to ESD in the process of storage, transporting, and assembling. WhenSIM7075G is
mounted on the users
’
mother board, the ESD components should be placed beside the connectors which
human body may touch, such as SIM card holder, audio jacks, switches, keys, etc. The following table
showsSIM7075G ESD measurement performance without any external ESD component.
Table 37: The ESD performance measurement table (Temperature: 25℃, Humidity: 45%.)
Part
Contact discharge
Air discharge
VBAT,GND
+/-6K
+/-12K
Antenna port
+/-5K
+/-10K
Other PADs
+/-1K
+/-3K