User's Manual
Table Of Contents
- Contents
- Table Index
- Revision History
- 1 Introduction
- 2 Package Information
- 3 Interface Application
- 4 RF Specifications
- 5 Electrical Specifications
- 6 SMT Production Guide
- 7 Packaging
- 空白页面
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SIM7600E-H_User Manual_V1.00 2017-10-11
5.4 Current Consumption
The current consumption is listed in the table below.
Table 33: Current consumption on VBAT Pins
(VBAT=3.8V)
LTE sleep/idle mode
LTE supply current
(GNSS off,without USB connection)
Sleep mode Typical: 4.6mA
Idle mode Typical: 17.5mA
LTE data
LTE-FDD B7
@5Mbps 22.2dBm Typical: 650mA
@10Mbps 22.1dBm Typical: 650mA
@20Mbps 22.1dBm Typical: 630mA
5.5 ESD Notes
SIM7600E-H is sensitive to ESD in the process of storage, transporting, and assembling. When
SIM7600E-H is mounted on the users’ mother board, the ESD components should be placed
beside the connectors which human body mayt touch, such as USIM card holder, audio jacks,
switches, keys, etc. The following table shows the SIM7600E-H ESD measurement
performance without any external ESD component.
Table 34: The performance measurement table (Temperature: 25℃, Humidity: 45%)
Part Contact discharge Air discharge
VBAT,GND
+/-6K +/-12K
Antenna port +/-5K +/-10K
USB
+/-4K +/-8K
UART +/-3K +/-6K
Other PADs
+/-3K +/-6K