User Manual

AUX - SSCL1500V800A5KVB
Power Semiconductor Half-Bridge Module
SGTOs
(TJ=25°C unless otherwise specified)
Performance Ratings
Measurements
Parameters Symbol Min. Typ. Max. Units Test Conditions
V
DRM
5 kV
60 Hz, 3 pulse, TJ=125°C
dv/dt
>1
kV/us
I
D
2 uA
V
GK
=0V, V
AK
=4.5kV, TJ=25
°
C
10 uA TJ=125oC, Note: 3 & 4
Peak Anode Current (8mSec)
I
P at 8ms
5 kA
dI/dt 15 kA/us
Turn-on Delay Time
t
D(ON)
100 ns Ls=8.2nH
Turn-off Delay Time
t
D(OFF)
TBD
C=0.15 uF Capacitor discharge
V
T
I
T
=100A, TJ=25oC
3.6 V Ig = 500 mA, TJ=125oC
Thermal Resistance
R
JC
0.04
o
C/W
S Diodes
(TJ=25°C unless otherwise specified)
Performance Ratings
Measurements
Parameters Symbol Min. Typ. Max. Units Test Conditions
Peak Off-State Forward Voltage
Off-State rate of Change of Voltage
Immunity
Anode-Cathode Off-State Forward Leakage
Current
Pk Rate of Change of Current (measured)
Anode-Cathode On-State Voltage
V
RRM
5 kV
dv/dt
>1
kV/us
RMS Forward Current
I
F(AVG)
100 A
T
c
= 125
o
C
Forward Voltage
V
F
I
F
= 200 A, T
J
= 25
o
C
3.6 V
I
F
= 200 A, T
J
= 125
o
C
T
J
, T
STG
125
o
C
R
JC
0.04
o
C/W
CAO 05/28/09
Repetitive Peak Reverse Voltage
Off-State rate of Change of Voltage
Immunity
Operating Junction and Storage
Temperature
Thermal Resistance from Junction to Case
(Per Diode)
2 REV 0