User's Manual

Table Of Contents
Parameter Symbol Test Condition Min Typ Max Unit
Step size SS
HFRCO
Coarse (% of period) 0.8 %
Fine (% of period) 0.1 %
Period Jitter PJ
HFRCO
0.2 % RMS
Note:
1.
Current consumption on DVDD instead if ANASW=1 in EMU_PWRCTRL register
4.1.8.5 ULFRCO
Table 4.16. ULFRCO
Parameter Symbol Test Condition Min Typ Max Unit
Oscillation frequency f
ULFRCO
TBD 1 TBD kHz
4.1.9 Flash Memory Characteristics
Table 4.17. Flash Memory Characteristics
1
Parameter Symbol Test Condition Min Typ Max Unit
Flash erase cycles before
failure
EC
FLASH
10000 cycles
Flash data retention RET
FLASH
T
AMB
<85°C 10 years
Word (32-bit) programming
time
t
W_PROG
20 26 40 μs
Page erase time t
PERASE
20 27 40 ms
Mass erase time t
MERASE
20 27 40 ms
Device erase time
2
t
DERASE
60 TBD ms
Page erase current
3
I
ERASE
3 mA
Mass or Device erase cur-
rent
3
5 mA
Write current
3
I
WRITE
3 mA
Note:
1.
Flash data retention information is published in the Quarterly Quality and Reliability Report.
2.
Device erase is issued over the AAP interface and erases all flash, SRAM, the Lock Bit (LB) page, and the User data page Lock
Word (ULW)
3. Measured at 25°C
BGM113 Blue Gecko Bluetooth
®
Smart Module Data Sheet
Electrical Specifications
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