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FSC‐BT630Datasheet
ShenzhenFeasycomTechnologyCo.,Ltdwww.feasycom.com
‐17‐
V
OL,HDL
‐ Outputlowvoltage,highdrive,3mA,VDD>=1.7V VSS ‐ VSS+0.4 V
I
OL,SD
‐ CurrentatVSS+0.4V,outputsetlow,standarddrive,VDD
≥1.7
1 2 4 mA
I
OL,HDH
‐ CurrentatVSS+0.4V,outputsetlow,highdrive,VDD>=
2.7V
6 10 15 mA
I
OL,HDL
‐ CurrentatVSS+0.4V,outputsetlow,highdrive,VDD>=
1.7V
3‐‐mA
I
OH,SD
‐ CurrentatVDD‐0.4V,outputsethigh,standarddrive,
VDD≥1.7
1 2 4 mA
I
OH,HDH
‐ CurrentatVDD‐0.4V,outputsethigh,highdrive,
VDD>=2.7V
6 9 14 mA
I
OH,HDL
‐ CurrentatVDD‐0.4V,outputsethigh,highdrive,VDD>=
1.7V
3 ‐ ‐ mA
t
RF,15pF
‐ Rise/falltime,lowdrivemode,10‐90%,15pFload1‐9‐nS
t
RF,25pF
‐ Rise/falltime,lowdrivemode,10‐90%,25pFload1 ‐ 13 ‐ nS
t
RF,50pF
‐ Rise/falltime,lowdrivemode,10‐90%,50pFload1‐25‐nS
t
HRF,15pF
‐ Rise/Falltime,highdrivemode,10‐90%,15pFload1 ‐ 4 ‐ nS
t
HRF,25pF
‐ Rise/Falltime,highdrivemode,10‐90%,25pFload1‐ 5‐nS
t
HRF,50pF
‐ Rise/Falltime,highdrivemode,10‐90%,50pFload1 ‐ 8 ‐ nS
R
PU
‐ Pull‐upresistance 11 13 16 KΩ
R
PD
‐Pull‐downresistance 11 13 16 KΩ
C
PAD
‐Padcapacitance‐3‐pF
C
PAD_NFC
‐PadcapacitanceonNFCpads ‐ 4 ‐ pF
I
NFC_LEAK
‐LeakagecurrentbetweenNFCpadswhendrivento
differentstates
‐ 2 10 uA
ThecurrentdrawnfromthebatterywhenGPIOisactiveasanoutputiscalculatedasfollows:
I
GPIO
=V
DD
C
load
f
C
load
beingtheloadcapacitanceand“f”istheswitchingfrequency.