Programming instructions

Unijunction Transistors
 National Instruments Corporation 4-23 Multisim Component Reference Guide
about 10 compared with those of conventional n-channel power MOSFETs of similar size and
voltage capability.
Changes to the epitaxial structure and the addition of recombination centers are responsible
for the reduction in the fall time and an increase in the latching current level of the IGBT. Fall
times as low as 0.1
µs and latching currents as high as 50A can be achieved, while retaining
on-resistance values <0.2
Ω for a 0.09cm
2
chip area.
4.14 Unijunction Transistors
The Programmable Unijunction Transistor is designed for adjustable characteristics such as
valley current, peak current and intrinsic standoff ratio.
ComponentRef.book Page 23 Thursday, December 7, 2006 10:12 AM