Programming instructions

MOSFET
 National Instruments Corporation 4-15 Multisim Component Reference Guide
r
D
= r
S
= 10% to 15% of the on-state drain-source resistance, R
DS(on)
.
CGSO Gate-source overlap capacitance per meter
channel width
0F
CBD Zero-bias bulk-drain junction capacitance 0 F
CBS Zero-bias bulk-source junction capacitance 0 F
PB Bulk-junction potential 0.8 V
RSH Drain and source diffusion sheet resistance 0 W
CJ Zero-bias bulk junction bottom capacitance
per m2 of junction area
0F/m
2
MJ Bulk junction bottom grading coefficient 0.5 –
CJSW Zero-bias bulk junction sidewall capacitance
per m of junction perimeter.
0F/m
MJSW Bulk junction sidewall grading coefficient 0.5 –
JS Bulk junction saturation current per m2 of
junction area
0A/m
2
TOX Oxide thickness 1e-07 m
NSUB Substrate doping 0 1/cm
3
NSS Surface state density 0 1/cm
2
TPG Type of gate material 1 –
LD Lateral diffusion 0 m
UO Surface mobility 600 cm
2
/Vs
KF Flicker noise coefficient 0 –
AF Flicker noise exponent 1 –
FC Coefficient for forward-bias depletion
capacitance formula
0.5 –
TNOM Parameter measurement temperature 27 °C
Symbol Parameter Name Default Unit
ComponentRef.book Page 15 Thursday, December 7, 2006 10:12 AM