Programming instructions

MOSFET
 National Instruments Corporation 4-13 Multisim Component Reference Guide
Reverse characteristics (V
DS
< 0):
where:
l = channel length modulation, measured in 1volts
V
TE
= threshold voltage, in volts
V
TO
= zero-bias threshold voltage, in volts
γ = bulk-threshold parameter, in volts
j = surface potential at strong inversion, in volts
V
BS
= bulk-to-source voltage, in volts
V
BD
= bulk-drain voltage, in volts
V
DS
= drain-to-source voltage, in volts
4.7.4 Time-Domain Model
The time-domain model takes into account the charge-storage effects of the junction diodes
used to model MOSFETs. The diodes are modeled using the diode time-domain model
described in the Diodes Parts Bin chapter.
00
10
210
2
for
for
for
()
()() ()
([( ) ]( ) ( )
VVE
IVV V VVV
VVVV V V VV
GS
DGSTE DS GSTEDS
DS GS TE DS DS DS GS TE
−≤
=−+ <−≤
−− + <≤−
βλ
βλ
VV VTE TO BD== −−






γϕ ϕ
00
10
210
2
for
for
for
()
()() ()
([( ) ]( ) ( )
VV
IVV V VVV
VVVV V V VV
GD
TE
DGSTE DS GDTEDS
DS GD TE DS DS DS GD TE
−≤
=− − − < − ≤−
−+ − <≤ −
βλ
βλ
ComponentRef.book Page 13 Thursday, December 7, 2006 10:12 AM