Programming instructions

BJT (NPN & PNP)
National Instruments Corporation 4-7 Multisim Component Reference Guide
IRB Current for base resistance equal to
(rb+RBM)/2
1e+30 0.1 A
RBM Minimum base resistance at high
currents
010W
XTF Coefficient for bias dependence of tF 0 0 -
VTF Voltage describing VBC dependence
of tF
1e+30 - V
ITF High current dependence of tF 0 - A
PTF Excess phase at frequency equal to 1/
(tF*2PI) Hz
0- Deg
XCJC Fraction of B-C depletion capacitance
connected to internal base node
1- -
VJS Substrate junction build-in potential .75 - V
MJS Substrate junction exponential factor 0 0.5 -
XTB Forward and reverse beta temperature
exponent
0- -
EG Energy gap for temperature effect on
IS
1.11 - eV
XTI Temperature exponent for effect on IS 3 - -
KF Flicker noise coefficient 0 - -
AF Flicker noise exponent 1 - -
FC Coefficient for forward-bias depletion
capacitance formula
.5 - -
TNOM Parameter measurement temperature 27 50 °C
Symbol Parameter Name Default Example Unit
ComponentRef.book Page 7 Thursday, December 7, 2006 10:12 AM