Programming instructions

Transistors
Multisim Component Reference Guide 4-6 ni.com
4.1.4 BJT Model Parameters and Defaults
Symbol Parameter Name Default Example Unit
IS Saturation current 1e-16 1e-15 A
β F Forward current gain coefficient 100 100 -
β R Reverse current gain coefficient 1 1 -
rb Base ohmic resistance 0 100 W
re Emitter ohmic resistance 0 10 W
rc Collector ohmic resistance 0 1 W
Cs Substrate capacitance 0 1 F
Ce, Cc Zero-bias junction capacitances 0 2e-09 F
φe,
φ c Junction potentials 0.75 0.75 V
τF Forward transit time 0 1e-13 s
τR Reverse transit time 0 10e-09 s
me, mc Junction grading coefficients 0.33 0.5 -
V
A Early voltage 1e+30 200 V
Ise Base emitter leakage saturation
current
0 1e-13 A
Ikf Forward beta high-current knee-point 1e+30 0.01 A
Ne Base-emitter leakage emission
coefficient
1.5 2 -
NF Forward current emission coefficient 1 1 -
NR Reverse current emission coefficient 1 1 -
VAR Reverse early voltage 1e+30 200 V
IKR Reverse beta roll-off corner current 1e+30 0.01 A
ISC B-C leakage saturation current 0 0.01 A
NC B-C leakage emission coefficient 2 1.5 -
ComponentRef.book Page 6 Thursday, December 7, 2006 10:12 AM