Programming instructions

Pin Diode
 National Instruments Corporation 3-5 Multisim Component Reference Guide
3.2 Pin Diode
The PIN diode consists of three semiconductor materials.
The center material is made up of intrinsic (pure) silicon. The
p- and n-type materials are
heavily doped and, as a result, have very low resistances.
When reverse biased, the PIN diode acts as a capacitor. The intrinsic material can be seen as
the dielectric of a capacitor. The heavily doped
p- and n-type materials can be viewed as the
two conductors.
The intrinsic layer, which is a pure semiconductor with no impurities, makes the PIN diode
respond better to infrared photons that penetrate deeper into the diode’s regions.
The intrinsic layer creates a larger depletion region, which causes the diode to produce a more
linear change in current in response to changes in light intensity.
BV Reverse bias breakdown
voltage
1e+30 - V
N Emission coefficient 1 1 -
EG Activation energy 1.11 1.11 eV
XTI Temperature exponent for
effect on IS
3.0 3.0 -
KF Flicker noise coefficient 0 0 -
AF Flicker noise exponent 1 1 -
FC Coefficient for forward-bias
depletion capacitance formula
0.5 0.5 -
IBV Current at reverse breakdown
voltage
0.001 1.0e-03 A
TNOM Parameter measurement
temperature
27 27-50 °C
Symbol Parameter Name Default Typical Value Unit
ComponentRef.book Page 5 Thursday, December 7, 2006 10:12 AM