User's Manual

SIM5320J Document
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Sleep @DRX=8 2.7 mA
Sleep @DRX=6 4.7mA
WCDMA 850
Sleep @DRX=9 2.2mA
Sleep @DRX=8 2.7 mA
Sleep @DRX=6 4.7mA
UMTS Sleep Mode (with USB suspended)
WCDMA 2100
Sleep @DRX=9 2.4mA
Sleep @DRX=8 2.8 mA
Sleep @DRX=6 4.8mA
WCDMA 850
Sleep @DRX=9 2.4mA
Sleep @DRX=8 2.8 mA
Sleep @DRX=6 4.8mA
HSDPA Data
WCDMA 2100
@Power 23dBm CQI=22 Typical 610mA
@Power 21dBm CQI=5 Typical 540mA
@Power -5dBm CQI=22 Typical 270mA
WCDMA 850
@Power 23dBm CQI=22 Typical 550mA
@Power 21dBm CQI=5 Typical 490mA
@Power -5dBm CQI=22 Typical 220mA
3.5. Electro-Static Discharge
SIM800H is an ESD sensitive component, so more attention should be paid to the procedure of handling and
packaging. The ESD test results are shown in the following table.
Table
4: The ESD characteristics (Temperature: 25
℃, Humidity: 45 %)
Part
Contact discharge
Air discharge
VBAT,GND
±4KV
±6KV
UART,USB
±2KV
±6KV
Antenna port
±4KV
±6KV
Other ports
±2KV
±2KV
4. Radio Characteristics
4.1. Module RF Output Power
The following table shows the module conducted output power.
Table 5: SIM5320J conducted RF output power
Frequency
Max
Min
E-GSM900
33dBm ±2dB
5dBm ± 5dB