Data Sheet

PHYSICAL CHARACTERISTICS
I/O CHARACTERISTICS
13 PROPRIETARY CB410L DATASHEET
SEQUANS Communications
•The Maximum values for I
ol
and I
oh
represent the maximal values for the
pad type. They are provided for information only.
Table 2-5: DC Characteristics for Digital IOs, Voltage 1.8 V
Parameter Drive Strength Min. Nom. Max. Unit
V
IL
Input Low Voltage
-0.3 0.63 V
V
IH
Input High Voltage
1.17 3.6 V
V
T
Threshold Point
0.79 0.87 0.94 V
V
T+
Schmitt Trigger Low to High Threshold Point
1 1.12 1.22 V
V
T-
Schmitt Trigger High to Low Threshold Point
0.61 0.71 0.8 V
V
T PU
Threshold Point with Pull-up Resistor Enabled
0.79 0.86 0.93 V
V
T PD
Threshold Point with Pull-down Resistor Enabled
0.8 0.87 0.95 V
V
T+ PU
Schmitt Trigger Low to High Threshold Point with Pull-up Resistor Enabled
1 1.12 1.21 V
V
T- PU
Schmitt Trigger High to Low Threshold Point with Pull-up Resistor Enabled
0.61 0.7 0.8 V
V
T+ PD
Schmitt Trigger Low to High Threshold Point with Pull-down Resistor Enabled
1.01 1.13 1.23 V
V
T- PD
Schmitt Trigger High to Low Threshold Point with Pull-down Resistor Enabled
0.62 0.72 0.81 V
I
I
Input Leakage Current @ VI=1.8V or 0V
±10 µA
I
OZ
Tri-state Output Leakage Current @ VO=1.8V or 0V
±10 µA
Input Capacitance 3 pF
R
PU
Pull-up Resistor
56 89 148 kOhm