Datasheet

SKM50GB12T4
2 Rev. 2 – 16.06.2009 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
F
= V
EC
I
F
=50A
V
GE
=0V
chip
T
j
=25°C
2.22 2.54 V
T
j
= 150 °C
2.18 2.5 V
V
F0
T
j
=25°C
1.3 1.5 V
T
j
= 150 °C
0.9 1.1 V
r
F
T
j
=25°C
18.4 20.8 mΩ
T
j
= 150 °C
25.6 28.0 mΩ
I
RRM
I
F
=50A
di/dt
off
= 1380 A/µs
V
GE
=±15V
V
CC
= 600 V
T
j
= 150 °C
35 A
Q
rr
T
j
= 150 °C
8.7 µC
E
rr
T
j
= 150 °C
3.8 mJ
R
th(j-c)
per diode 0.84 K/W
Module
L
CE
30 nH
R
CC'+EE'
terminal-chip
T
C
=25°C
0.65 mΩ
T
C
= 125 °C
1mΩ
R
th(c-s)
per module 0.04 0.05 K/W
M
s
to heat sink M6 3 5 Nm
M
t
to terminals M5
2.5 5 Nm
Nm
w 160 g
SEMITRANS
®
2
GB
Fast IGBT4 Modules
SKM50GB12T4
Features
•V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Typical Applications
• AC inverter drives
•UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°