Datasheet

SKM50GB12T4
© by SEMIKRON Rev. 2 – 16.06.2009 1
SEMITRANS
®
2
GB
Fast IGBT4 Modules
SKM50GB12T4
Features
•V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
Typical Applications
• AC inverter drives
•UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
CES
1200 V
I
C
T
j
= 175 °C
T
c
=25°C
81 A
T
c
=80°C
62 A
I
Cnom
50 A
I
CRM
I
CRM
= 3xI
Cnom
150 A
V
GES
-20 ... 20 V
t
psc
V
CC
= 800 V
V
GE
≤ 15 V
V
CES
≤ 1200 V
T
j
= 150 °C
10 µs
T
j
-40 ... 175 °C
Inverse diode
I
F
T
j
= 175 °C
T
c
=25°C
65 A
T
c
=80°C
49 A
I
Fnom
50 A
I
FRM
I
FRM
= 3xI
Fnom
150 A
I
FSM
t
p
= 10 ms, sin 180°, T
j
=25°C
270 A
T
j
-40 ... 175 °C
Module
I
t(RMS)
200 A
T
stg
-40 ... 125 °C
V
isol
AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
I
C
=50A
V
GE
=15V
chiplevel
T
j
=25°C
1.85 2.1 V
T
j
= 150 °C
2.2 2.4 V
V
CE0
T
j
=25°C
0.8 0.9 V
T
j
= 150 °C
0.7 0.8 V
r
CE
V
GE
=15V
T
j
=25°C
21.0 24.0 mΩ
T
j
= 150 °C
30.0 32.0 mΩ
V
GE(th)
V
GE
=V
CE
, I
C
=1.7mA 5 5.8 6.5 V
I
CES
V
GE
=0V
V
CE
= 1200 V
T
j
=25°C
0.1 0.3 mA
T
j
= 150 °C
mA
C
ies
V
CE
=25V
V
GE
=0V
f=1MHz
2.77 nF
C
oes
f=1MHz
0.20 nF
C
res
f=1MHz
0.16 nF
Q
G
V
GE
=- 8 V...+ 15 V
280 nC
R
Gint
T
j
=25°C
4.0 Ω
t
d(on)
V
CC
= 600 V
I
C
=50A
V
GE
=±15V
R
G on
=8.2Ω
R
G off
=8.2Ω
di/dt
on
= 1700 A/µs
di/dt
off
= 670 A/µs
T
j
= 150 °C
98 ns
t
r
T
j
= 150 °C
29 ns
E
on
T
j
= 150 °C
5.5 mJ
t
d(off)
T
j
= 150 °C
325 ns
t
f
T
j
= 150 °C
75 ns
E
off
T
j
= 150 °C
4.5 mJ
R
th(j-c)
per IGBT 0.53 K/W