Datasheet
SEMITRANS
®
3
Trench IGBT Module
SKM 400GB126D
SKM 400GAL126D
Preliminary Data
Features
! " #
Typical Applications
$ %
&'
%
GB GAL
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
;
#
;
2.. $7
5
.
+
() *
<
- ! - 1
+
-() *
<
- ! - 1
;.
+
() * - - -
+
-() * . 1 . A
;
+
() * ( ( 2 B
+
-() * ( 0 2 B
#
334
#
;
2.. $
+
-() * 2A. $
D
%I% !2.. $I: 00 :
5
?-) 7
!.. (0 F
3
=+?>K
%% . -1 HIJ
Freewheeling Diode
;
#
;
2.. $7
5
.
+
() *
<
- ! - 1
+
-() *
<
- ! - 1
;.
+
() * - - -
+
-() * . 1 . A
;
+
() * ( ( 2
+
-() * ( 0 2
#
334
#
;
2.. $
+
-() * 2A. $
D
%I% !2.. $I: 00 :
5
?-) 7
!.. (0 F
3
=+?>K
%% . -1 HIJ
Module
L
-) (.
3
M@M
< ?
() * . 2) B
-() * . ) B
3
=?>
% . .21 HIJ
4
N 4! 2 ) O
4
4! ( ) ) O
2()
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
SKM 400GB126D ...
2 11-09-2006 SEN © by SEMIKRON