Datasheet

SKM200GB12V
2 Rev. 5 – 17.06.2011 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
F
= V
EC
I
F
= 200 A
V
GE
=0V
chip
T
j
=25°C
2.20 2.52 V
T
j
=150°C
2.15 2.47 V
V
F0
T
j
=25°C
1.3 1.5 V
T
j
=150°C
0.9 1.1 V
r
F
T
j
=25°C
4.5 5.1 m
T
j
=150°C
6.3 6.8 m
I
RRM
I
F
= 200 A
di/dt
off
=5300A/µs
V
GE
=±15V
V
CC
= 600 V
T
j
=150°C
230 A
Q
rr
T
j
=150°C
30 µC
E
rr
T
j
=150°C
13 mJ
R
th(j-c)
per diode 0.26 K/W
Module
L
CE
15 20 nH
R
CC'+EE'
terminal-chip
T
C
=25°C
0.25 m
T
C
=125°C
0.5 m
R
th(c-s)
per module 0.02 0.038 K/W
M
s
to heat sink M6 3 5 Nm
M
t
to terminals M6
2.5 5 Nm
Nm
w 325 g
SEMITRANS
®
3
GB
SKM200GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°