Datasheet
SEMITRANS
®
2
Trench IGBT Modules
SKM 145GB176D
SKM 145GAL176D
Features
!"
#$%
Typical Applications
& ' ()( *
)(+ &
,! $
Remarks
- * '
! '.
/ 0
1
2
GB GAL
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
?
%
?
7++ &;
1
+
5
3(4
.
7"# 7"C
5
73( 4
.
7"# 7"C
?+
5
3(4 7"7 7"B
5
73( 4 +"C 7"7
?
5
3(4 ( # D
5
73( 4 ) 8 D
%
009
%
?
7++ &
5
73( 4 )) &
F
'J' 3@(+ &J> BC"( >
1
*7( ;
73++ 3)"( G
0
5*L
'' +"B# IJK
Freewheeling Diode
?
%
?
7++ &;
1
+
5
3(4
.
7"# 7"C
5
73( 4
.
7"# 7"C
?+
5
3(4 7"7 7"B
5
73( 4 +"C 7"7
?
5
3(4 ( #
5
73( 4 ) 8
%
009
%
?
7++ &
5
73( 4 )) &
F
'J' 3@(+ &J> BC"( >
1
*7( ;
73++ 3)"( G
0
5*?L
'' +"B# IJK
Module
M
B+
0
NAN
." *
3(4 +")( D
73( 4 7 D
0
*
' +"+( IJK
9
- 9# B(O
9
9( 3"( ( O
7#+
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
SKM 145GB176D ...
2 16-11-2007 TGR © by SEMIKRON