Datasheet

DS13105 Rev 4 99/135
STM32WLE5J8/JB/JC Electrical characteristics
127
5.3.13 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling two LEDs through I/O ports).
the device is stressed by the following electromagnetic events until a failure occurs (failure
indicated by the LEDs):
• ESD (electrostatic discharge, positive and negative) applied to all device pins until a
functional disturbance occurs (test compliant with IEC 61000-4-2 standard)
• FTB (burst of fast transient voltage, positive and negative) applied to VDD and VSS
pins, through a 100 pF capacitor, until a functional disturbance occurs (test compliant
with IEC 61000-4-4 standard)
A device reset allows normal operations to be resumed.
The test results given in the table below, are based on the EMS levels and classes defined
in application note EMC design guide for STM8, STM32 and Legacy MCUs (AN1709).
I
DD
Average consumption from V
DD
Write mode 3.4 -
mA
Erase mode 3.4 -
Maximum current (peak)
Write mode 7 (for 6 µs) -
Erase mode 7 (for 67 µs) -
1. Guaranteed by design.
Table 60. Flash memory characteristics
(1)
(continued)
Symbol Parameter Conditions Typ Max Unit
Table 61. Flash memory endurance and data retention
Symbol Parameter Conditions Min
(1)
Unit
N
END
Endurance T
A
= -40 to +105 °C 10 kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C 30
Years
1 kcycle
(2)
at T
A
= 105 °C 15
1 kcycle
(2)
at T
A
= 125 °C 7
10 kcycles
(2)
at T
A
= 55 °C 30
10 kcycles
(2)
at T
A
= 85 °C 15
10 kcycles
(2)
at T
A
= 105 °C 10
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.