Datasheet
Table Of Contents
- Table 1. Device summary
- 1 Introduction
- 2 Description
- 3 Functional overview
- 3.1 Architecture
- 3.2 Arm Cortex-M4 core
- 3.3 Adaptive real-time memory accelerator (ART Accelerator)
- 3.4 Memory protection unit (MPU)
- 3.5 Memories
- 3.6 Security memory management
- 3.7 Boot modes
- 3.8 Sub-GHz radio
- 3.9 Power supply management
- 3.10 Low-power modes
- 3.11 Peripheral interconnect matrix
- 3.12 Reset and clock controller (RCC)
- 3.13 General-purpose inputs/outputs (GPIOs)
- 3.14 Directly memory access controller (DMA)
- 3.15 Interrupts and events
- 3.16 Analog-to-digital converter (ADC)
- 3.17 Voltage reference buffer (VREFBUF)
- 3.18 Digital-to-analog converter (DAC)
- 3.19 Comparator (COMP)
- 3.20 True random number generator (RNG)
- 3.21 Advanced encryption standard hardware accelerator (AES)
- 3.22 Public key accelerator (PKA)
- 3.23 Timer and watchdog
- 3.24 Real-time clock (RTC), tamper and backup registers
- 3.25 Inter-integrated circuit interface (I2C)
- 3.26 Universal synchronous/asynchronous receiver transmitter (USART/UART)
- 3.27 Low-power universal asynchronous receiver transmitter (LPUART)
- 3.28 Serial peripheral interface (SPI)/integrated-interchip sound interface (I2S)
- 3.29 Development support
- 4 Pinouts, pin description and alternate functions
- 5 Electrical characteristics
- 5.1 Parameter conditions
- 5.2 Absolute maximum ratings
- 5.3 Operating conditions
- 5.3.1 Main performances
- 5.3.2 General operating conditions
- 5.3.3 Sub-GHz radio characteristics
- Table 26. Sub-GHz radio power consumption
- Table 27. Sub-GHz radio power consumption in transmit mode (SMPS ON)
- Table 28. Sub-GHz radio general specifications
- Table 29. Sub-GHz radio receive mode specifications
- Table 30. Sub-GHz radio transmit mode specifications
- Table 31. Sub-GHz radio power management specifications
- 5.3.4 Operating conditions at power-up/power-down
- 5.3.5 Embedded reset and power-control block characteristics
- 5.3.6 Embedded voltage reference
- 5.3.7 Supply current characteristics
- Typical and maximum current consumption
- Table 35. Current consumption in Run and LPRun modes, CoreMark code with data running from Flash memory, ART enable (cache ON, prefetch OFF)
- Table 36. Current consumption in Run and LPRun modes, CoreMark code with data running from SRAM1
- Table 37. Typical current consumption in Run and LPRun modes, with different codes running from Flash memory, ART enable (cache ON, prefetch OFF)
- Table 38. Typical current consumption in Run and LPRun modes, with different codes running from SRAM1
- Table 39. Current consumption in Sleep and LPSleep modes, Flash memory ON
- Table 40. Current consumption in LPSleep mode, Flash memory in power-down
- Table 41. Current consumption in Stop 2 mode
- Table 42. Current consumption in Stop 1 mode
- Table 43. Current consumption in Stop 0 mode
- Table 44. Current consumption in Standby mode
- Table 45. Current consumption in Shutdown mode
- Table 46. Current consumption in VBAT mode
- Table 47. Current under Reset condition
- I/O system current consumption
- On-chip peripheral current consumption
- Typical and maximum current consumption
- 5.3.8 Wakeup time from low-power modes and voltage scaling transition times
- 5.3.9 External clock source characteristics
- 5.3.10 Internal clock source characteristics
- 5.3.11 PLL characteristics
- 5.3.12 Flash memory characteristics
- 5.3.13 EMC characteristics
- 5.3.14 Electrical sensitivity characteristics
- 5.3.15 I/O current injection characteristics
- 5.3.16 I/O port characteristics
- 5.3.17 NRST pin characteristics
- 5.3.18 Analog switches booster
- 5.3.19 Analog-to-digital converter characteristics
- 5.3.20 Temperature sensor characteristics
- 5.3.21 VBAT monitoring characteristics
- 5.3.22 Voltage reference buffer characteristics
- 5.3.23 Digital-to-analog converter characteristics
- 5.3.24 Comparator characteristics
- 5.3.25 Timers characteristics
- 5.3.26 Communication interfaces characteristics
- 6 Package information
- 6.1 UFBGA73 package information
- Figure 26. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array package outline
- Table 90. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array mechanical data
- Figure 27. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array recommended footprint
- Table 91. UFBGA recommended PCB design rules (0.5 mm pitch BGA)
- Device marking for UFBGA73
- 6.2 Package thermal characteristics
- 6.1 UFBGA73 package information
- 7 Ordering information
- 8 Revision history
DS13105 Rev 4 71/135
STM32WLE5J8/JB/JC Electrical characteristics
127
5.3.6 Embedded voltage reference
Parameters given in the table below are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 25: General operating
conditions.
1. Continuous mode means Run and Sleep modes, or temperature sensor enable in LPRun and LPSleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except Shutdown) and its consumption is therefore included in the supply current
characteristics tables.
Table 34. Embedded internal voltage reference
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT
Internal reference voltage –40 °C < T
J
< +105 °C 1.182 1.212 1.232 V
t
S_vrefint
(1)
ADC sampling time when reading
the internal reference voltage
-4
(2)
--
µs
t
start_vrefint
Start time of reference voltage
buffer when ADC is enable
--812
(2)
I
DD
(V
REFINTBUF
)
V
REFINT
buffer consumption from
V
DD
when converted by ADC
- - 12.5 20
(2)
µA
V
REFINT
Internal reference voltage spread
over the temperature range
V
DD
= 3.3 V - 5 7.5
(2)
mV
T
Coeff
Temperature coefficient –40 °C < T
J
< +105 °C - 30 50
(2)
ppm/°C
A
Coeff
Long term stability 1000 hours, T = 25 °C - 300 1000
(2)
ppm
V
DDCoeff
Voltage coefficient 3.0 V < V
DD
< 3.6 V - 250 1200
(2)
ppm/V
V
REFINT_DIV1
1/4 reference voltage
-
24 25 26
%
V
REFINT
V
REFINT_DIV2
1/2 reference voltage 49 50 51
V
REFINT_DIV3
3/4 reference voltage 74 75 76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.