Datasheet
Table Of Contents
- Table 1. Device summary
- 1 Introduction
- 2 Description
- 3 Functional overview
- 3.1 Architecture
- 3.2 Arm Cortex-M4 core
- 3.3 Adaptive real-time memory accelerator (ART Accelerator)
- 3.4 Memory protection unit (MPU)
- 3.5 Memories
- 3.6 Security memory management
- 3.7 Boot modes
- 3.8 Sub-GHz radio
- 3.9 Power supply management
- 3.10 Low-power modes
- 3.11 Peripheral interconnect matrix
- 3.12 Reset and clock controller (RCC)
- 3.13 General-purpose inputs/outputs (GPIOs)
- 3.14 Directly memory access controller (DMA)
- 3.15 Interrupts and events
- 3.16 Analog-to-digital converter (ADC)
- 3.17 Voltage reference buffer (VREFBUF)
- 3.18 Digital-to-analog converter (DAC)
- 3.19 Comparator (COMP)
- 3.20 True random number generator (RNG)
- 3.21 Advanced encryption standard hardware accelerator (AES)
- 3.22 Public key accelerator (PKA)
- 3.23 Timer and watchdog
- 3.24 Real-time clock (RTC), tamper and backup registers
- 3.25 Inter-integrated circuit interface (I2C)
- 3.26 Universal synchronous/asynchronous receiver transmitter (USART/UART)
- 3.27 Low-power universal asynchronous receiver transmitter (LPUART)
- 3.28 Serial peripheral interface (SPI)/integrated-interchip sound interface (I2S)
- 3.29 Development support
- 4 Pinouts, pin description and alternate functions
- 5 Electrical characteristics
- 5.1 Parameter conditions
- 5.2 Absolute maximum ratings
- 5.3 Operating conditions
- 5.3.1 Main performances
- 5.3.2 General operating conditions
- 5.3.3 Sub-GHz radio characteristics
- Table 26. Sub-GHz radio power consumption
- Table 27. Sub-GHz radio power consumption in transmit mode (SMPS ON)
- Table 28. Sub-GHz radio general specifications
- Table 29. Sub-GHz radio receive mode specifications
- Table 30. Sub-GHz radio transmit mode specifications
- Table 31. Sub-GHz radio power management specifications
- 5.3.4 Operating conditions at power-up/power-down
- 5.3.5 Embedded reset and power-control block characteristics
- 5.3.6 Embedded voltage reference
- 5.3.7 Supply current characteristics
- Typical and maximum current consumption
- Table 35. Current consumption in Run and LPRun modes, CoreMark code with data running from Flash memory, ART enable (cache ON, prefetch OFF)
- Table 36. Current consumption in Run and LPRun modes, CoreMark code with data running from SRAM1
- Table 37. Typical current consumption in Run and LPRun modes, with different codes running from Flash memory, ART enable (cache ON, prefetch OFF)
- Table 38. Typical current consumption in Run and LPRun modes, with different codes running from SRAM1
- Table 39. Current consumption in Sleep and LPSleep modes, Flash memory ON
- Table 40. Current consumption in LPSleep mode, Flash memory in power-down
- Table 41. Current consumption in Stop 2 mode
- Table 42. Current consumption in Stop 1 mode
- Table 43. Current consumption in Stop 0 mode
- Table 44. Current consumption in Standby mode
- Table 45. Current consumption in Shutdown mode
- Table 46. Current consumption in VBAT mode
- Table 47. Current under Reset condition
- I/O system current consumption
- On-chip peripheral current consumption
- Typical and maximum current consumption
- 5.3.8 Wakeup time from low-power modes and voltage scaling transition times
- 5.3.9 External clock source characteristics
- 5.3.10 Internal clock source characteristics
- 5.3.11 PLL characteristics
- 5.3.12 Flash memory characteristics
- 5.3.13 EMC characteristics
- 5.3.14 Electrical sensitivity characteristics
- 5.3.15 I/O current injection characteristics
- 5.3.16 I/O port characteristics
- 5.3.17 NRST pin characteristics
- 5.3.18 Analog switches booster
- 5.3.19 Analog-to-digital converter characteristics
- 5.3.20 Temperature sensor characteristics
- 5.3.21 VBAT monitoring characteristics
- 5.3.22 Voltage reference buffer characteristics
- 5.3.23 Digital-to-analog converter characteristics
- 5.3.24 Comparator characteristics
- 5.3.25 Timers characteristics
- 5.3.26 Communication interfaces characteristics
- 6 Package information
- 6.1 UFBGA73 package information
- Figure 26. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array package outline
- Table 90. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array mechanical data
- Figure 27. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array recommended footprint
- Table 91. UFBGA recommended PCB design rules (0.5 mm pitch BGA)
- Device marking for UFBGA73
- 6.2 Package thermal characteristics
- 6.1 UFBGA73 package information
- 7 Ordering information
- 8 Revision history
Electrical characteristics STM32WLE5J8/JB/JC
68/135 DS13105 Rev 4
TXRMP PA ramping time Programmable 10 - 3400
µs
TS_TX TX wakeup time
Frequency synthesizer
enabled
- 36 + PA ramping -
1. For low-power PA, +15 dBm maximum RF output power can be reached with optimal settings.
Table 30. Sub-GHz radio transmit mode specifications (continued)
Symbol Description Conditions Min Typ Max Unit
Table 31. Sub-GHz radio power management specifications
Symbol Description Conditions
Frequency
(MHz)
Unit
470 490 868
TRPOR Required POR reset pulse duration For V
DD
1.8 V 50 100 - µs
VEOLL End-of-life low-threshold voltage - 1.81 1.89 1.96
V
VEOLH End-of-life high-threshold voltage - 1.86 1.94 2.1
VEOLD End-of-life hysteresis voltage VEOLH - VEOLL 50 53 56 mV
VREG Main regulated supply
LDO or SMPS over process,
voltage and temperature range
1.47 1.55 1.62 V
LDTRSMPS
Load transient for ILSMPS 100 µA to
100 mA in 10 µs
LDO running
High BW mode - 25 -
mV
Low BW mode - 47 -
ILSMPS SMPS load current - - - 100 mA
IDDSMPS SMPS quiescent current
SMPS high power, V
DD
= 3.3 V - 538 -
µA
SMPS low power, V
DD
= 3.3 V - 460 -
EFFSMPS
SMPS converter average efficiency
EFF = VREG x ILOAD / V
BAT
x IDD
SMPS 100 mA max V
DD
= 3.3 V,
ILSMPS = 6 mA
-71-
%
SMPS 100 mA max V
DD
= 3.3 V,
ILSMPS = 50 mA
-89-
SMPS 100 mA max V
DD
= 1.8 V,
ILSMPS = 6 mA
-88-
SMPS 100 mA max V
DD
= 2.0 V,
ILSMPS = 50 mA
-91-
SMPS 100 mA max V
DD
= 3.3 V,
ILSMPS = 100 mA
-86-
Cout Shared between LDO and SMPS ±20 % tolerance - 470 - nF
Lout SMPS inductor - - 15 - µH
TSSMPS Sleep and Sleep, SMPS startup time For ILIM = 50 mA - 70 - µs