Datasheet
Table Of Contents
- Table 1. Device summary
- 1 Introduction
- 2 Description
- 3 Functional overview
- 3.1 Architecture
- 3.2 Arm Cortex-M4 core
- 3.3 Adaptive real-time memory accelerator (ART Accelerator)
- 3.4 Memory protection unit (MPU)
- 3.5 Memories
- 3.6 Security memory management
- 3.7 Boot modes
- 3.8 Sub-GHz radio
- 3.9 Power supply management
- 3.10 Low-power modes
- 3.11 Peripheral interconnect matrix
- 3.12 Reset and clock controller (RCC)
- 3.13 General-purpose inputs/outputs (GPIOs)
- 3.14 Directly memory access controller (DMA)
- 3.15 Interrupts and events
- 3.16 Analog-to-digital converter (ADC)
- 3.17 Voltage reference buffer (VREFBUF)
- 3.18 Digital-to-analog converter (DAC)
- 3.19 Comparator (COMP)
- 3.20 True random number generator (RNG)
- 3.21 Advanced encryption standard hardware accelerator (AES)
- 3.22 Public key accelerator (PKA)
- 3.23 Timer and watchdog
- 3.24 Real-time clock (RTC), tamper and backup registers
- 3.25 Inter-integrated circuit interface (I2C)
- 3.26 Universal synchronous/asynchronous receiver transmitter (USART/UART)
- 3.27 Low-power universal asynchronous receiver transmitter (LPUART)
- 3.28 Serial peripheral interface (SPI)/integrated-interchip sound interface (I2S)
- 3.29 Development support
- 4 Pinouts, pin description and alternate functions
- 5 Electrical characteristics
- 5.1 Parameter conditions
- 5.2 Absolute maximum ratings
- 5.3 Operating conditions
- 5.3.1 Main performances
- 5.3.2 General operating conditions
- 5.3.3 Sub-GHz radio characteristics
- Table 26. Sub-GHz radio power consumption
- Table 27. Sub-GHz radio power consumption in transmit mode (SMPS ON)
- Table 28. Sub-GHz radio general specifications
- Table 29. Sub-GHz radio receive mode specifications
- Table 30. Sub-GHz radio transmit mode specifications
- Table 31. Sub-GHz radio power management specifications
- 5.3.4 Operating conditions at power-up/power-down
- 5.3.5 Embedded reset and power-control block characteristics
- 5.3.6 Embedded voltage reference
- 5.3.7 Supply current characteristics
- Typical and maximum current consumption
- Table 35. Current consumption in Run and LPRun modes, CoreMark code with data running from Flash memory, ART enable (cache ON, prefetch OFF)
- Table 36. Current consumption in Run and LPRun modes, CoreMark code with data running from SRAM1
- Table 37. Typical current consumption in Run and LPRun modes, with different codes running from Flash memory, ART enable (cache ON, prefetch OFF)
- Table 38. Typical current consumption in Run and LPRun modes, with different codes running from SRAM1
- Table 39. Current consumption in Sleep and LPSleep modes, Flash memory ON
- Table 40. Current consumption in LPSleep mode, Flash memory in power-down
- Table 41. Current consumption in Stop 2 mode
- Table 42. Current consumption in Stop 1 mode
- Table 43. Current consumption in Stop 0 mode
- Table 44. Current consumption in Standby mode
- Table 45. Current consumption in Shutdown mode
- Table 46. Current consumption in VBAT mode
- Table 47. Current under Reset condition
- I/O system current consumption
- On-chip peripheral current consumption
- Typical and maximum current consumption
- 5.3.8 Wakeup time from low-power modes and voltage scaling transition times
- 5.3.9 External clock source characteristics
- 5.3.10 Internal clock source characteristics
- 5.3.11 PLL characteristics
- 5.3.12 Flash memory characteristics
- 5.3.13 EMC characteristics
- 5.3.14 Electrical sensitivity characteristics
- 5.3.15 I/O current injection characteristics
- 5.3.16 I/O port characteristics
- 5.3.17 NRST pin characteristics
- 5.3.18 Analog switches booster
- 5.3.19 Analog-to-digital converter characteristics
- 5.3.20 Temperature sensor characteristics
- 5.3.21 VBAT monitoring characteristics
- 5.3.22 Voltage reference buffer characteristics
- 5.3.23 Digital-to-analog converter characteristics
- 5.3.24 Comparator characteristics
- 5.3.25 Timers characteristics
- 5.3.26 Communication interfaces characteristics
- 6 Package information
- 6.1 UFBGA73 package information
- Figure 26. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array package outline
- Table 90. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array mechanical data
- Figure 27. UFBGA - 73 balls, 5 × 5 mm, ultra thin fine pitch ball grid array recommended footprint
- Table 91. UFBGA recommended PCB design rules (0.5 mm pitch BGA)
- Device marking for UFBGA73
- 6.2 Package thermal characteristics
- 6.1 UFBGA73 package information
- 7 Ordering information
- 8 Revision history
DS13105 Rev 4 131/135
STM32WLE5J8/JB/JC Package information
132
Device marking for UFBGA73
The following figure gives an example of topside marking versus pin 1 position identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.
Figure 28. UFBGA73 marking example (package top view)
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.
6.2 Package thermal characteristics
The maximum chip junction temperature (T
J
max) must never exceed the values given in
Table 25: General operating conditions.
The maximum chip-junction temperature, T
J
max (in °C), can be calculated using the
equation:
T
J
max = T
A
max + (P
D
max x
JA
)
where:
• T
A
max is the maximum ambient temperature in °C.
•
JA
is the package junction-to-ambient thermal resistance, in °C/W.
• P
D
max is the sum of P
INT
max and P
I/O
max (P
D
max = P
INT
max + P
I/O
max).
• P
INT
max is the product of I
DD
and
V
DD
, expressed in Watt. This is the maximum chip
internal power.
P
I/O
max represents the maximum power dissipation on output pins:
P
I/O
max = (V
OL
× I
OL
) + ((V
DD
– V
OH
) × I
OH
)
taking into account the actual V
OL
/ I
OL
and V
OH
/ I
OH
of the I/Os at low and high level in the
application.
When the SMPS is used, a portion of the power consumption is dissipated into the external
inductor, therefore reducing the device power dissipation. This portion depends mainly on
the inductor ESR characteristics.
MSv64357V1
Date code
Product identification
(1)
Y WW
WLE5J8I6
Revision code
R
Pin 1 identifier