Datasheet

Table Of Contents
DS13105 Rev 4 69/135
STM32WLE5J8/JB/JC Electrical characteristics
127
5.3.4 Operating conditions at power-up/power-down
Parameters given in the table below are derived from tests performed under the ambient
temperature condition summarized in Table 25: General operating conditions.
5.3.5 Embedded reset and power-control block characteristics
Parameters given in the table below are derived from tests performed under the ambient
temperature conditions summarized in Table 25: General operating conditions.
IDDLDO LDO quiescent current
V
DD
= 3.3 V,
ILOAD = 0 to 100 mA,
current limiter off
-95-
µAV
DD
= 3.3 V, ILOAD = 100 mA,
current limiter on
-380-
V
DD
= 3.3 V, ILOAD = 50 mA,
current limiter on
-280-
ILDO LDO load current - - 100 - mA
LDTRLDO
Load transient for ILDO 100 µA to
100 mA in 10 µs
--25-mV
TSLDO Sleep and Sleep, LDO startup time For ILIM = 50 mA - 60 - µs
VDIG Digital regulator target voltage - 1.14 1.2 1.26 V
ILM
(1)
Current limiter max value - 25 50 200 mA
1. The default current limiter value is set to 50 mA.
Table 31. Sub-GHz radio power management specifications (continued)
Symbol Description Conditions
Frequency
(MHz)
Unit
470 490 868
Table 32. Operating conditions at power-up/power-down
Symbol Parameter Min Max Unit
t
VDD
V
DD
rise time rate -
µs/V
V
DD
fall time rate 10
t
VDDA
V
DDA
rise time rate 0
V
DDA
fall time rate 10
t
VDDRF
V
DDRF
rise time rate -
V
DDRF
fall time rate -
Table 33. Embedded reset and power-control block characteristics
Symbol Parameter Conditions
(1)
Min Typ Max Unit
t
RSTTEMPO
(2)
Reset temporization after BOR0 is detected V
DD
rising - 250 400 s