Data Sheet

B,Nov,2011
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9013
TRANSISTOR (NPN)
FEATURES
z
High Collector Current.
z Complementary to S9012.
z Excellent h
FE
Linearity.
MARKING: J3
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 40
V
V
CEO
Collector-Emitter Voltage 25
V
V
EBO
Emitter-Base Voltage 5
V
I
C
Collector Current 500 mA
P
C
Collector Power Dissipation 300 mW
R
ΘJA
Thermal Resistance From Junction To Ambient
416
℃/W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature
-55～+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
=0.1mA, I
E
=0 40
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA, I
B
=0 25 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=0.1mA, I
C
=0 5 V
Collector cut-off current
I
CBO
V
CB
=40V, I
E
=0 0.1 uA
Collector cut-off current
I
CEO
V
CE
=20V, I
B
=0 0.1 uA
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 0.1 uA
h
FE(1)
V
CE
=1V, I
C
=50mA 120 400
DC current gain
h
FE(2)
V
CE
=1V, I
C
=500mA 40
Collector-emitter saturation voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA 0.6 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=500mA, I
B
=50mA 1.2 V
Base-emitter voltage
V
BE
V
CB
=1V,I
C
=10mA, 0.7 V
Transition frequency
f
T
V
CE
=6V,I
C
=20mA, f=30MHz 150 MHz
Collector output capacitance
C
ob
V
CB
=6V, I
E
=0, f=1MHz 8 pF
CLASSIFICATION OF
h
FE(1)
RANK L H J
RANGE
120-200 200-350 300-400
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR