Datasheet

Figure 59-3. Power Supply Connection for Battery Backup
(1.71V — 3.63V)
IO Supply
VDDIOB
VDDANA
VDDIO
VDDCORE
GND
GNDANA
SAM E54
VSW
VBAT (PB03)
(1.71V — 3.63V)
Main Supply
100nF
100nF
100nF
100nF
10µF
1µF
10µF
Close to device
(for every pin)
10µH
4.7µF
Note:
1. The passive component value shown in figures 58-1, 58-2 & 58-3 is a typical example. Refer to
54.10.1 Voltage Regulator Characteristics for details on specification.
2. Decoupling capacitors should be placed close to the device for each supply pin pair in the signal
group, low ESR capacitors should be used for better decoupling.
3. An inductor should be added between the external power and the V
DD
for power filtering.
4. A ferrite bead has better filtering performance compared to standard inductor at high frequencies. A
ferrite bead can be added between the main power supply (V
DD
) and V
DDANA
to prevent digital
noise from entering the analog power domain. The bead should provide enough impedance (i.e.,
50Ω at 20 MHz and 220Ω at 100 MHz) to separate the digital and analog power domains. Make
sure to select a ferrite bead designed for filtering applications with a low DC resistance to avoid a
large voltage drop across the ferrite bead.
59.3 External Analog Reference Connections
The following schematic checklist is only necessary if the application is using one or more of the external
analog references. If the internal references are used instead, the following circuits are not necessary.
SAM D5x/E5x Family Data Sheet
Schematic Checklist
© 2019 Microchip Technology Inc.
Datasheet
DS60001507E-page 2098