Datasheet

Note:
1. These are based on simulation. They are not covered by production test limits or characterization.
Table 54-41. Flash Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Units
Ret
NVM10k
Retention after up to 10k At TA = 85°C 20 - Years
Cyc
NVM
Cycling Endurance
(1)
At TA = 85°C 10K - Cycles
Note:
1. An endurance cycle is a write-and-erase operation.
Table 54-42. Flash Erase and Programming Current
(1)
Symbol Parameter Typ. Max. Units
I
FAP
Active Current current during whole programming operation 8 mA
I
FAE
Active Current current during Erase operation 8 mA
Note:
1. These values are based on simulation. They are not covered by production test limits or
characterization.
54.13 Oscillators Characteristics
54.13.1 Crystal Oscillator (XOSC) Characteristics
Digital Clock Characteristics
The following table describes the characteristics for the oscillator when a digital clock is applied on XIN.
Table 54-43. Digital Clock Characteristics
Symbol Parameter Min. Typ. Max. Units
F
XIN
XIN clock frequency - - 48 MHz
DC
XIN
(see Note 1) XIN clock duty cycle 40 60 %
Note:
1. These values are based on simulation. They are not covered by production test limits or
characterization.
Chrystal Oscillator Characteristics
The following Table describes the characteristics for the oscillator when a crystal is connected between
XIN and XOUT.
SAM D5x/E5x Family Data Sheet
Electrical Characteristics at 85°C
© 2019 Microchip Technology Inc.
Datasheet
DS60001507E-page 2012