Datasheet

Table 54-37. Power Consumption
(1)
Symbol Parameters
PTC scan
rate (msec)
Oversamples Ta Typ. Max Units
IDD Current Consumption
10
4
Max 85°C Typ 25°C
137 1164
µA
16 146 1179
50
4 77 1094
16 79 1100
100
4 68 1086
16 69 1089
200
4 64 1085
16 65 1087
Note:
1. These values are based on characterization.
54.12 NVM Characteristics
Table 54-38. NVM Flash Read Wait States for Worst Case Conditions (EFP part numbers)
CPU Fmax (Mhz) 0 WS 1 WS 2 WS 3 WS 4 WS 5 WS 6 WS Auto WS
Read Operations 1 Cycle 2 Cycles 3 Cycles 4 Cycles 5 Cycles 6 Cycles 7 Cycles n Cycles
VDD>1.71V 19 38 57 76 95 100 120 120
Table 54-39. NVM Flash Read Wait States for Worst Case Conditions (non-EFP part numbers)
CPU Fmax(MHz) 0 WS 1 WS 2 WS 3 WS 4 WS 5 WS Auto WS
Read Operations 1 Cycle 2 Cycles 3 Cycles 4 Cycles 5 Cycles 6 Cycles N Cycles
VDD > 2.7V 24 51 77 101 119 120 120
VDD > 1.71V 22 44 67 89 111 120 120
Maximum operating frequencies are given in the table above in MHz, but are limited by the Embedded
Flash access time when the processor is fetching code out of it. Theses tables provide the device
maximum operating frequency defined by the field RWS of the NVMCTRL CTRLA register when
automatic wait states (AUTOWS) is disabled. This field defines the number of Wait states required to
access the Embedded Flash Memory.
Table 54-40. Flash Timing Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
t
FPW
Program Cycle Time Write Page 1.5 3
(1)
ms
t
CE
Chip Erase 6.4 25
(1)
s
t
FEB
Erase Block 50 200
(1)
ms
SAM D5x/E5x Family Data Sheet
Electrical Characteristics at 85°C
© 2019 Microchip Technology Inc.
Datasheet
DS60001507E-page 2011