Datasheet

Table 54-22. BOD33 Characteristics on V
DD
and V
BAT
Monitoring in Low-Power Mode (During
Standby/Backup/Hibernate Modes)
Symbol Parameters Conditions (see
Notes 3, 4)
Min Typ Max Unit
VBOD or VBOD-
(1)
BOD33 threshold
level Hysteresis
OFF or BOD33
threshold level
Hysteresis ON
LEVEL[7:0] = 0x00
(min)
1.413 1.510 1.599 V
LEVEL[7:0]= 0x19
(recommended
value)
1.551 1.659 1.760
LEVEL[7:0] = 0x1C
(fuse value)
1.569 1.677 1.778
LEVEL[7:0] = 0xFF
(max)
2.845 3.045 3.229
VBOD+
(2)
BOD33 threshold
level Hysteresis
ON at power
voltage rising
LEVEL[7:0] = 0x00
(min)
1.426 1.522 1.611
LEVEL[7:0]= 0x19
(recommended
value)
1.564 1.672 1.773
LEVEL[7:0] = 0x1C
(fuse value)
1.582 1.690 1.791
LEVEL[7:0] = 0xFF
(max)
2.848 3.045 3.230
Level_Step DC threshold step - - 6.00 - mV
Tstart Startup time
(6)
Time from enable
to RDY
- 27 - μs
Note:
1. VBOD = VBOD- = 1.5 + LEVEL[7:0) * Level_Step LEVEL[7:0] is calibration setting bus of threshold
level.
2. VBOD+ = VBOD- + N * HYST_STEP N = 0 to 15 according to HYST[3:0] value HYST_STEP =
Level_Step.
3. Hysteresis OFF mode, HYST[3:0] = 0x0.
4. Hysteresis ON mode, HYST[3:0] = 0x1 to 0xf; Min/Typ/Max values given for 0x2.
5. At the upper side of LEVEL[7:0] values depending on the Hysteresis value chosen with HYST[3:0],
the VBOD+ level reaches an overflow, e.g., for HYST[3:0] = 0d2 the hysteresis is 2 x Level_Step =
12 mV up to position 253 and position 254 to 255 above must not be used.
6. These are based on design simulation. They are not covered by production test limits or
characterization.
SAM D5x/E5x Family Data Sheet
Electrical Characteristics at 85°C
© 2019 Microchip Technology Inc.
Datasheet
DS60001507E-page 2000