Datasheet

Table 54-13. Wake-Up Timing
Sleep Mode Conditions Typ Unit
IDLE 230 ns
STANDBY STDBYCFG.FASTWKUP = 0 110 µs
STDBYCFG.FASTWKUP = 1 Fast Wakeup is enabled on NVM. 92 µs
STDBYCFG.FASTWKUP = 2 Fast Wakeup is enabled on the main voltage
regulator.
25 µs
STDBYCFG.FASTWKUP = 3 Fast Wakeup is enabled on both NVM and
MAINVREG.
5 µs
Hibernate 320 µs
BACKUP 350 µs
OFF 210 µs
54.9 I/O Pin Characteristics
The pins have two different speeds controlled by the Drive Strength bit located in the Pin Configuration
register PORT (PORT.PINCFG.DRVSTR).
Table 54-14. I/O Pins Common Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
V
IL
Input Low-Level Voltage V
DD
= 1.71V-3.6V - - 0.3 × V
DD
V
V
IH
Input High-Level Voltage V
DD
= 1.71V-3.6V 0.7 × V
DD
- -
V
OL
Output Low-Level Voltage V
DD
> 1.71V, I
OL
max - 0.1 × V
DD
0.2 × V
DD
V
OH
Output High-Level Voltage V
DD
> 1.71V, I
OH
max 0.8 × V
DD
0.9 × V
DD
-
R
PULL
Pull-up - Pull-down Resistance - 20 40 60 kΩ
Pull-down resistance on pads PA24 and
PA25
- 14 23 28
I
LEAK
Input Leakage Current Pull-up resistors disabled -1 ±0.015 1 µA
Table 54-15. I/O Pins Maximum Output Current
(2,3)
Symbol Parameter Conditions
Backup Pins in
Backup Mode
Backup and
Normal Pins
Backup and
Normal Pins
Units
DRVSTR=0 DRVSTR=1
I
OL
Maximum Output low-
level current
V
DD
=1.71V-3V 0.005 0.5 3
mA
V
DD
=3V-3.63V 0.01 2 8
I
OH
Maximum Output high-
level current
V
DD
=1.71V-3V 0.005 0.5 3
V
DD
=3V-3.63V 0.01 2 8
SAM D5x/E5x Family Data Sheet
Electrical Characteristics at 85°C
© 2019 Microchip Technology Inc.
Datasheet
DS60001507E-page 1995