Datasheet

Table 54-12. Backup and Off Mode Current Consumption
Mode Conditions V
DD
(1)
T
A
Typ. Max. Units
Backup
Powered by VDDIO, no RTC running VDDIO+VDDANA
consumption No backup RAM retained (PM.BKUPCFG.BRAMCFG
= 0x2)
1.8V
Max. at 85°C
Typ at 25°C
2.1 41.7
µA
3.3V 2.5 42.5
Powered by VDDIO with RTC running on XOSC32K VDDIO
+VDDANA consumption No backup RAM retained
(PM.BKUPCFG.BRAMCFG = 0x2)
1.8V 2.7 42.6
3.3V 3.3 43.6
Powered by VDDIO, no RTC running VDDIO+VDDANA
consumption 4 KB backup RAM retained
(PM.BKUPCFG.BRAMCFG = 0x1)
1.8V 2.4 48.4
3.3V 2.8 49.1
Powered by VDDIO, no RTC running VDDIO+VDDANA
consumption 8 KB backup RAM retained
(PM.BKUPCFG.BRAMCFG = 0x0)
1.8V 2.7 55.1
3.3V 3.1 55.8
Battery backup mode powered by VBAT with RTC running on
XOSC32K
1.8V 2.7 42.6
3.3V 3.3 43.6
OFF -
1.8V
Max at 85°C
Typ at 25°C
0.191 2.30
µA
3.3V 0.331 3.35
Note:
1. V
DD
is defined as the common voltage applied to V
DDIO
and V
DDANA
. Refer to Acronyms and
Abbreviations for additional information on terminology.
54.8 Wake-Up Time
Conditions:
• V
DD
= 3.3V
• LDO Regulation mode (default mode)
• CPU clock = DFLL48 in open loop (default configuration)
• NVM automatic wait state and cache enabled (default configuration)
Measurement Methods
For IDLE and STANDBY, the exit of mode is done through asynchronous EIC wake-up. The wake-up time
is measured between the toggle of the EIC pin and the set of the IO pin done by the first executed
instructions in EIC interrupt handler.
For Backup and hibernate, the exit of mode is done through RTC wake-up. The wake-up time is
measured between the toggle of the RTC pin (SUPC_BKOUT_RTCTGL) and the set of the IO done by
the first executed instructions after reset.
For OFF mode, the exit of mode is done through Reset pin, the time is measured between the rising edge
of the RESETN signal and the set of the IO done by the first executed instructions after Reset.
SAM D5x/E5x Family Data Sheet
Electrical Characteristics at 85°C
© 2019 Microchip Technology Inc.
Datasheet
DS60001507E-page 1994