Datasheet
Table Of Contents
- Spartan-7 FPGAs Data Sheet: DC and AC Switching Characteristics
- Introduction
- DC Characteristics
- Power-On/Off Power Supply Sequencing
- DC Input and Output Levels
- AC Switching Characteristics
- Performance Characteristics
- IOB Pad Input/Output/3-State
- I/O Standard Adjustment Measurement Methodology
- Input/Output Logic Switching Characteristics
- Input Serializer/Deserializer Switching Characteristics
- Output Serializer/Deserializer Switching Characteristics
- Input/Output Delay Switching Characteristics
- CLB Switching Characteristics
- CLB Distributed RAM Switching Characteristics (SLICEM Only)
- CLB Shift Register Switching Characteristics (SLICEM Only)
- Block RAM and FIFO Switching Characteristics
- DSP48E1 Switching Characteristics
- Clock Buffers and Networks
- MMCM Switching Characteristics
- PLL Switching Characteristics
- Device Pin-to-Pin Output Parameter Guidelines
- Device Pin-to-Pin Input Parameter Guidelines
- Additional Package Parameter Guidelines
- XADC Specifications
- Configuration Switching Characteristics
- eFUSE Programming Conditions
- References
- Revision History
- Please Read: Important Legal Notices
Spartan-7 FPGAs Data Sheet: DC and AC Switching Characteristics
DS189 (v1.9) March 13, 2019 www.xilinx.com
Product Specification 4
Table 3: DC Characteristics Over Recommended Operating Conditions
Symbol Description Min Typ
(1)
Max Units
V
DRINT
Data retention V
CCINT
voltage (below which configuration
data might be lost).
0.75 – – V
V
DRI
Data retention V
CCAUX
voltage (below which configuration
data might be lost).
1.5 – – V
I
REF
V
REF
leakage current per pin. – – 15 µA
I
L
Input or output leakage current per pin (sample-tested). – – 15 µA
C
IN
(2)
Die input capacitance at the pad. – – 8 pF
I
RPU
Pad pull-up (when selected) at V
IN
= 0V, V
CCO
=3.3V. 90 – 330 µA
Pad pull-up (when selected) at V
IN
= 0V, V
CCO
=2.5V. 68 – 250 µA
Pad pull-up (when selected) at V
IN
= 0V, V
CCO
=1.8V. 34 – 220 µA
Pad pull-up (when selected) at V
IN
= 0V, V
CCO
=1.5V. 23 – 150 µA
Pad pull-up (when selected) at V
IN
= 0V, V
CCO
=1.2V. 12 – 120 µA
I
RPD
Pad pull-down (when selected) at V
IN
=3.3V. 68 – 330 µA
I
CCADC
Analog supply current, analog circuits in powered up state. – – 25 mA
I
BATT
(3)
Battery supply current. – – 150 nA
R
IN_TERM
(4)
Thevenin equivalent resistance of programmable input
termination to V
CCO
/2 (UNTUNED_SPLIT_40).
28 40 55 Ω
Thevenin equivalent resistance of programmable input
termination to V
CCO
/2 (UNTUNED_SPLIT_50).
35 50 65 Ω
Thevenin equivalent resistance of programmable input
termination to V
CCO
/2 (UNTUNED_SPLIT_60).
44 60 83 Ω
n Temperature diode ideality factor. – 1.010 – –
r Temperature diode series resistance. – 2 – Ω
Notes:
1. Typical values are specified at nominal voltage, 25°C.
2. This measurement represents the die capacitance at the pad, not including the package.
3. Maximum value specified for worst case process at 25°C.
4. Termination resistance to a V
CCO
/2 level.
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