Datasheet
Table Of Contents
- Proximity Capacitive Touch Sensor Controller
- 1 Pin Descriptions
- 2 Schematic Drawings and Implementation
- 3 Device Operation Overview
- 4 Electrical Characteristics
- 5 Register Operation Descriptions
- 5.1 Register Read/Write Operations and Measurement Run/Stop Mode
- 5.2 Touch Status Registers (0x00~0x01)
- 5.3 Electrode Filtered Data Register (0x04~0x1D)
- 5.4 Baseline Value Register (0x1E~0x2A)
- 5.5 Baseline Filtering Control Register (0x2B~0x40)
- 5.6 Touch / Release Threshold (0x41~0x5A)
- 5.7 Debounce Register (0x5B)
- 5.8 Filter and Global CDC CDT Configuration (0x5C, 0x5D)
- 5.9 Electrode Charge Current Register (0x5F~0x6B)
- 5.10 Electrode Charge Time Register (0x6C~0x72)
- 5.11 Electrode Configuration Register (ECR, 0x5E)
- 5.12 Out-Of-Range Status Registers (0x02, 0x03)
- 5.13 Soft Rest Register (0x80)
- 5.14 GPIO Registers (0x73~0x7A)
- 6 MPR121 Serial Communication
- Disclaimer
MPR121
Sensors
8 Freescale Semiconductor, Inc.
4 Electrical Characteristics
4.1 Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in Table 3 may affect device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high-static
voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher
than maximum-rated voltages to this high-impedance circuit.
4.2 ESD and Latch-up Protection Characteristics
Normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without
suffering any permanent damage. During the device qualification, ESD stresses were performed for the Human Body Model
(HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses, the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 3. Absolute Maximum Ratings - Voltage (with respect to V
SS
)
Rating Symbol Value Unit
Supply Voltage
V
DD
-0.3 to +3.6 V
Supply Voltage
V
REG
-0.3 to +2.75 V
Input Voltage
SCL, SDA, IRQ
V
IN
V
SS
- 0.3 to V
DD
+ 0.3
V
Operating Temperature Range
T
O
-40 to +85 °C
GPIO Source Current per Pin
i
GPIO
12 mA
GPIO Sink Current per Pin
i
GPIO
1.2 mA
Storage Temperature Range
T
S
-40 to +125 °C
Table 4. ESD and Latch-up Test Conditions
Rating Symbol Value Unit
Human Body Model (HBM)
V
ESD
±2000 V
Machine Model (MM)
V
ESD
±200 V
Charge Device Model (CDM)
V
ESD
±500 V
Latch-up current at T
A
= 85°C I
LATCH
±100 mA