Datasheet

9397 750 XXXXX © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Short form data sheet Rev. 1.2 — 31 March 2011 18 of 25
Philips Semiconductors
PN532/C1
NFC controller
10. Limiting values
11. Recommended operating conditions
[1] VSS represents DVSS, TVSS1, TVSS2, AVSS.
[2] Supply voltage of VBAT below 3.3 V reduces the performance (e.g. the achievable operating distance).
12. Thermal characteristics
Table 13: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PVDD Supply Voltage -0.5 4 V
VBAT Battery Supply Voltage -0.5 6.0 V
P
tot
Total power dissipation tbd mW
I
TX1
Maximum current in transmitter TX1 -100 100 mA
I
TX2
Maximum current in transmitter TX2 -100 100 mA
T
stg
Storage temperature -55 150 °C
T
j
Junction temperature 100 °C
Table 14: ESD Characteristics
Symbol Parameter Conditions Specification Value
ESDH ESD Susceptibility (Human Body model) 1500 Ohm, 100pF JESD22-A114-B 2 KV
ESDM ESD Susceptibility (Machine model) 0.75 μH, 200 pF JESD22-A114-A 200 V
ESDC ESD Susceptibility (Charge Device model) Field induced model JESC22-C101-A 1 KV
Table 15: Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
Tamb Ambiant Temperature -30 +25 +85 °C
VBAT Battery Supply
Voltage
VSS = 0V
[1]
,
[2]
2.7 5 5.4 V
PVDD Supply voltage from
host interface
VSS=0V 1.6 1.8-3.3 3.6 V
Table 16: Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
thj-a
thermal resistance from junction to
ambient (for HVQFN40 package)
in free air with exposed pad soldered
on a 4 layer Jedec PCB-0.5
35 K/W