Datasheet
6
LDC1612
,
LDC1614
SNOSCY9A –DECEMBER 2014–REVISED MARCH 2018
www.ti.com
Product Folder Links: LDC1612 LDC1614
Submit Documentation Feedback Copyright © 2014–2018, Texas Instruments Incorporated
(1) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions
result in very limited self-heating of the device such that T
J
= T
A
. No guarantee of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where T
J
> T
A
. Absolute Maximum Ratings indicate junction temperature limits beyond
which the device may be permanently degraded, either mechanically or electrically.
(2) Register values are represented as either binary (b is the prefix to the digits), or hexadecimal (0x is the prefix to the digits). Decimal
values have no prefix.
(3) Limits are ensured by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are ensured through
correlations using statistical quality control (SQC) method.
(4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(5) I
2
C read/write communication and pull-up resistors current through SCL, SDA not included.
(6) Sensor inductor: 2 layer, 32 turns/layer, 14 mm diameter, PCB inductor with L=19.4 µH, R
P
=5.7 kΩ at 2 MHz Sensor capacitor: 330 pF
1% COG/NP0 Target: Aluminum, 1.5 mm thickness Channel = Channel 0 (continuous mode) ƒ
CLKIN
= 40 MHz, FIN_DIVIDER0 = b0000,
FREF_DIVIDER0 = 0x0001, RCOUNT0 = 0xFFFF, SETTLECOUNT0 = 0x0100, RP_OVERRIDE = b1, AUTO_AMP_DIS = b1,
DRIVE_CURRENT0 = 0x9800
6.5 Electrical Characteristics
Unless otherwise specified, all limits ensured for T
A
= 25°C, V
DD
= 3.3 V. See
(1)
PARAMETER TEST CONDITIONS
(2)
MIN
(3)
TYP
(4)
MAX
(3)
UNIT
POWER
V
DD
Supply Voltage T
A
= -40°C to +125°C 2.7 3.6 V
I
DD
Supply Current (not including
sensor current)
(5)
ƒ
CLKIN
= 10 MHz
(6)
2.1 mA
I
DDSL
Sleep Mode Supply Current
(5)
SLEEP_MODE_EN = b1 35 60 µA
I
SD
Shutdown Mode Supply
Current
(5)
SD = V
DD
0.2 1 µA
SENSOR
I
SENSORMAX
Sensor Maximum Current drive HIGH_CURRENT_DRV = b0
DRIVE_CURRENTx = 0xF800
1.5 mA
R
P
Sensor R
P
1 100 kΩ
IHD
SENSORMAX
High current sensor drive mode:
Sensor Maximum Current
HIGH_CURRENT_DRV = b1
DRIVE_CURRENT0 = 0xF800
Channel 0 only
6 mA
R
P_HD_MIN
Minimum sensor R
P
250 Ω
ƒ
SENSOR
Sensor Resonance Frequency T
A
= -40°C to +125°C 0.001 10 MHz
V
SENSORMAX
Maximum oscillation amplitude
(peak)
1.8 V
N
BITS
Number of bits 28 bits
ƒ
CS
Maximum Channel Sample Rate single active channel continuous
conversion, SCL=400 kHz
4.08 kSPS
C
IN
Sensor Pin input capacitance 4 pF
DIGITAL PIN LEVELS
V
IL
Low voltage threshold (ADDR
and SD)
0.3*V
DD
V
V
IH
High voltage threshold (ADDR
and SD)
0.7*V
DD
V
V
OL
INTB low voltage output level 3mA sink current 0.4 V
V
OH
INTB high voltage output level 2.4 V
REFERENCE CLOCK
ƒ
CLKIN
External Reference Clock Input
Frequency (CLKIN)
T
A
= -40°C to +125°C
2 40 MHz
CLKIN
DUTY_MIN
External Reference Clock
minimum acceptable duty cycle
(CLKIN)
40%
CLKIN
DUTY_MAX
External Reference Clock
maximum acceptable duty cycle
(CLKIN)
60%
V
CLKIN_LO
CLKIN low voltage threshold 0.3*V
DD
V
V
CLKIN_HI
CLKIN high voltage threshold 0.7*V
DD
V