Datasheet

 2015-2017 Microchip Technology Inc. DS20005426C-page 5
MCP9600
INPUT/OUTPUT PIN DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 2.7V to 5.5V, GND = Ground, T
A
= -40°C to +125°C
(where: T
A
=T
C
, defined as Device Ambient Temperature).
Parameters Sym. Min. Typ. Max. Units Conditions
Serial Input/Output and I
2
C Slave Address Input (ADDR)
Input (SCL, SDA)
High-Level Voltage V
IH
0.7 V
DD
——V
Low-Level Voltage V
IL
— — 0.3 V
DD
V
Input Current I
LEAK
—— ±2µA
Output (SDA)
Low-Level Voltage V
OL
——0.4VI
OL
= 3 mA
High-Level Current (leakage) I
OH
—— 1µAV
OH
= V
DD
Low-Level Current I
OL
6——mAV
OL
= 0.6V
Capacitance C
IN
—5 —pF
I
2
C Slave Address Selection Levels (Note 1:)
Command Byte <1100 000x>V
ADDR
GND — — V Address = 0
Command Byte <1100 001x>V
ADDR_L
(2:) V
ADDR_TYP
(2:)
V
ADDR_H
(2:)
Address = 1
Command Byte <1100 010x> Address = 2
Command Byte <1100 011x> Address = 3
Command Byte <1100 100x> Address = 4
Command Byte <1100 101x> Address = 5
Command Byte <1100 110x> Address = 6
Command Byte <1100 111x>——V
DD
Address = 7
SDA and SCLK Inputs
Hysteresis V
HYST
— 0.05 V
DD
—VV
DD
> 2V
Spike Suppression T
SP
—50 —ns
Note 1: The ADDR pin can be tied to V
DD
or V
SS
. For additional slave addresses, a resistive divider network can
be used to set voltage levels that are rationed to V
DD
. The device supports up to 8 levels (see
Section 6.3.1 “I
2
C Addressing” for recommended resistor values).
2: V
ADDR_TYP
= Address * V
DD
/8 + V
DD
/16,
V
ADDR_L
=V
ADDR_TYP
–V
DD
/32 and
V
ADDR_H
=V
ADDR_TYP
+V
DD
/32 (where: Address = 1, 2, 3, 4, 5, 6).
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 2.7V to 5.5V, GND = Ground.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +125 °C (Note 1:)
Operating Temperature Range T
A
-40 — +125 °C
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, MQFN 
JA
—38.8— °C/W
Note 1: Operation in this range must not cause T
J
to exceed the Maximum Junction Temperature (+150°C).