Datasheet

MCP9600
DS20005426C-page 4  2015-2017 Microchip Technology Inc.
Sensor Characteristics
T
C
and T
H
Temperature Resolution T
RES
— ±0.0625 — °C With max. resolution
Sampling Rate (T
A
=+25°C) t
CONV
— 320 — ms 18-bit resolution
— 80 — ms 16-bit resolution
— 20 — ms 14-bit resolution
— 5 — ms 12-bit resolution
Temperature Calculation Time t
CALC
—12—msT
A
=+25°C
Thermocouple Input
Offset Error V
OERR
—±2—µV
Offset Error Drift
V
OERR_DRF
—50—nV/°C
Full-Scale Gain Error
G
ERR
——±0.04%FST
A
= 0°C to +85°C
Full-Scale Gain Error Drift
G
ERR_DRF
— ±0.01 — %FS
Full-Scale Integral Nonlinearity INL — 10 — ppm
Voltage Resolution V
RES
— 2 — µV 18-bit resolution
Differential Mode Range V
IN_DF
-250 — +250 mV ADC input range
Differential Mode Impedance Z
IN_DF
—300—k
Common-Mode Range V
IN_CM
V
DD
– 0.3 — V
DD
+ 0.3 V (Note 4)
Common-Mode Impedance Z
IN_CM
—25—M
Common-Mode Rejection Ratio CMRR — 105 — dB
Power Supply Rejection Ratio PSRR — 60 — dB
Line Regulation V
Line_R
—0.2—°C/V
Alert 1, 2, 3, 4 Outputs
Low-Level Voltage V
OL
——0.4VI
OL
= 3 mA
High-Level Voltage V
OH
V
DD
– 0.5 ——VI
OH
= 3 mA
Operating Voltage and Current
Operating Voltage V
DD
2.7 — 5.5 V
I
2
C Inactive Current I
DD
—0.30.5mAV
DD
= 3.3V,
T
A
= +85°C
I
2
C Active Current or During t
CALC
—1.52.5mA
Shutdown Current I
SHDN
—2 5µAI
2
C inactive,
T
A
= +85°C
Power-on Reset (POR) Thresholds V
POR
1.0 2.1 2.6 V Rising/Falling V
DD
Thermal Response
5x5 mm MQFN Package (Cold-Junction) t
RSP
— 3 — s Time to 63%, +25°C
(air) to +125°C (oil
bath), 2x2 inch PCB
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, V
DD
= 2.7V to 5.5V, GND = Ground, T
A
= -40°C to +125°C
(where: T
A
=T
C
, defined as Device Ambient Temperature).
Parameters Sym. Min. Typ. Max. Unit Conditions
Note 1: The T
C
and T

summation is implemented in milli-volt (mV) domain. The result, T
H
(mV), is converted to Degree
Celsius using the NIST ITS-90 Conversion database.
2: The T
_ACY
temperature accuracy specification is defined as the device accuracy to the NIST ITS-90 Ther-
mocouple EMF to Degree Celsius Conversion Database. T

is also defined as the temperature difference
between the hot and cold-junctions or temperatures from the NIST ITS-90 database with T
C
= 0°C.
3: The device measures temperature below the specified range, however, the sensitivity to changes in temperature
reduces exponentially. Type R and S measure down to -50°C, or -0.226 mV
EMF
and -0.235 mV
EMF
, respectively.
Type B measures down to 500°C or 1.242 mV
EMF
(see Figures 2-7, 2-8, 2-10, 2-11, 2-14 and 2-17).
4: Exceeding the V
IN_CM
input range may cause leakage current through the ESD protection diodes at the
thermocouple input pins. This parameter is characterized but not production tested.