Datasheet

 2015-2017 Microchip Technology Inc. DS20005426C-page 3
MCP9600
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
V
DD
............................................................................................................................................................................ 6.0V
Voltage at All Input/Output Pins ........................................................................................................ GND – 0.3V to 6.0V
Storage Temperature ..............................................................................................................................-65°C to +150°C
Ambient Temperature with Power Applied .............................................................................................. -40°C to +125°C
Junction Temperature (T
J
) .................................................................................................................................... +150°C
ESD Protection on All Pins (HBM:MM) .......................................................................................................... (4 kV:300V)
Latch-up Current at Each Pin............................................................................................................................. ±100 mA
†Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 2.7V to 5.5V, GND = Ground, T
A
= -40°C to +125°C
(where: T
A
=T
C
, defined as Device Ambient Temperature).
Parameters Sym. Min. Typ. Max. Unit Conditions
Thermocouple Sensor Measurement Accuracy
T
H
Hot-Junction Accuracy (V
DD
=3.3V)
T
H
=T
C
+T
∆
(Note 1)
T
H_ACY
-1.5 ±0.5 +1.5 °C T
A
= 0°C to +85°C,
-3.0 ±1 +3.0 °C
T
A
= -40°C to +125°C
T
C
Cold-Junction Accuracy (V
DD
=3.3V) T
C_ACY
-1.0 ±0.5 +1.0 °C T
A
= 0°C to +85°C
-2.0 ±1 +2.0 °C T
A
= -40°C to +125°C
T
∆
Junctions Temperature Delta Accuracy
Type K: T
∆
= -200°C to +1372°C
V
EMF
Range: -5.907 mV to 54.886 mV
T
∆_ACY
-0.5 ±0.25 +0.5 °C T
A
= 0°C to +85°C,
V
DD
=3.3V (Note 2)
Type J: T
∆
= -150°C to +1200°C
V
EMF
Range: -3.336 mV to 47.476 mV
Type T: T
∆
= -200°C to +400°C
V
EMF
Range: -5.603 mV to 20.81 mV
Type N: T
∆
= -150°C to +1300°C
V
EMF
Range: -3.336 mV to 47.476 mV
Type E: T
∆
= -200°C to +1000°C
V
EMF
Range: -8.825 mV to 76.298 mV
Type S: T
∆
= 250°C to +1664°C
V
EMF
Range: -1.875 mV to 17.529 mV
T
A
= 0°C to +85°C,
V
DD
=3.3V (Note 2, 3)
Type B: T
∆
= 1000°C to +1800°C
V
EMF
Range: -4.834 mV to 13.591 mV
Type R: T
∆
= 250°C to +1664°C
V
EMF
Range: -1.923 mV to 19.732 mV
Note 1: The T
C
and T

summation is implemented in milli-volt (mV) domain. The result, T
H
(mV), is converted to Degree
Celsius using the NIST ITS-90 Conversion database.
2: The T
_ACY
temperature accuracy specification is defined as the device accuracy to the NIST ITS-90 Ther-
mocouple EMF to Degree Celsius Conversion Database. T

is also defined as the temperature difference
between the hot and cold-junctions or temperatures from the NIST ITS-90 database with T
C
= 0°C.
3: The device measures temperature below the specified range, however, the sensitivity to changes in temperature
reduces exponentially. Type R and S measure down to -50°C, or -0.226 mV
EMF
and -0.235 mV
EMF
, respectively.
Type B measures down to 500°C or 1.242 mV
EMF
(see Figures 2-7, 2-8, 2-10, 2-11, 2-14 and 2-17).
4: Exceeding the V
IN_CM
input range may cause leakage current through the ESD protection diodes at the
thermocouple input pins. This parameter is characterized but not production tested.