Datasheet

PSoC
®
4: PSoC 4000 Family
Datasheet
Document Number: 001-89638 Rev. *G Page 20 of 34
Memory
System Resources
Power-on Reset (POR)
Table 16. Flash DC Specifications
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID173 V
PE
Erase and program voltage 1.71 – 5.5 V
Notes
11. It can take as much as 20 milliseconds to write to Flash. During this time the device should not be Reset, or Flash operations will be interrupted and cannot be relied
on to have completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs.
Make certain that these are not inadvertently activated.
12. Guaranteed by characterization.
Table 17. Flash AC Specifications
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID174 T
ROWWRITE
[11]
Row (block) write time (erase and
program)
– – 20 ms Row (block) = 64 bytes
SID175 T
ROWERASE
[11]
Row erase time – – 13 ms
SID176 T
ROWPROGRAM
[11]
Row program time after erase – – 7 ms
SID178 T
BULKERASE
[11]
Bulk erase time (16 KB) – – 15 ms
SID180
[12]
T
DEVPROG
[11]
Total device program time – – 7.5 seconds
SID181
[12]
F
END
Flash endurance 100 K – – cycles
SID182
[12]
F
RET
Flash retention. T
A
 55 °C, 100 K
P/E cycles
20 – – years
SID182A
[12]
Flash retention. T
A
 85 °C, 10 K
P/E cycles
10 – – years
Table 18. Power On Reset (PRES)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID.CLK#6 SR_POWER_UP Power supply slew rate 1 – 67 V/ms At power-up
SID185
[12]
V
RISEIPOR
Rising trip voltage 0.80 – 1.5 V
SID186
[12]
V
FALLIPOR
Falling trip voltage 0.70 – 1.4 V
Table 19. Brown-out Detect (BOD) for V
CCD
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID190
[12]
V
FALLPPOR
BOD trip voltage in active and
sleep modes
1.48 – 1.62 V
SID192
[12]
V
FALLDPSLP
BOD trip voltage in Deep Sleep 1.11 – 1.5 V