Datasheet
PSoC
®
4: PSoC 4000 Family
Datasheet
Document Number: 001-89638 Rev. *G Page 14 of 34
Electrical Specifications
Absolute Maximum Ratings
Device Level Specifications
All specifications are valid for –40 °C T
A
85 °C and T
J
100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
except where noted.
Note
4. Usage above the absolute maximum conditions listed in Table 1 may cause permanent damage to the device. Exposure to Absolute Maximum conditions for extended
periods of time may affect device reliability. The Maximum Storage Temperature is 150 °C in compliance with JEDEC Standard JESD22-A103, High Temperature
Storage Life. When used below Absolute Maximum conditions but above normal operating conditions, the device may not operate to specification.
Table 3. Absolute Maximum Ratings
[4]
Spec ID# Parameter Description Min Typ Max Units
Details/
Conditions
SID1 V
DD_ABS
Digital supply relative to V
SS
–0.5 – 6 V
SID2 V
CCD_ABS
Direct digital core voltage input relative
to V
SS
–0.5 – 1.95 V
SID3 V
GPIO_ABS
GPIO voltage –0.5 – V
DD
+0.5 V
SID4 I
GPIO_ABS
Maximum current per GPIO –25 – 25 mA
SID5 I
GPIO_injection
GPIO injection current, Max for V
IH
>
V
DD
, and Min for V
IL
< V
SS
–0.5 – 0.5 mA Current injected
per pin
BID44 ESD_HBM Electrostatic discharge human body
model
2200 – – V
BID45 ESD_CDM Electrostatic discharge charged device
model
500 – – V
BID46 LU Pin current for latch-up –140 – 140 mA
Table 4. DC Specifications
Typical values measured at V
DD
= 3.3 V and 25 °C.
Spec ID# Parameter Description Min Typ Max Units
Details/
Conditions
SID53 V
DD
Power supply input voltage 1.8 – 5.5 V With regulator
enabled
SID255 V
DD
Power supply input voltage (V
CCD
=
V
DD
)
1.71 – 1.89 V Internally unreg-
ulated supply
SID54 V
DDIO
V
DDIO
domain supply 1.71 – V
DD
V
SID55 C
EFC
External regulator voltage bypass – 0.1 – µF X5R ceramic or
better
SID56 C
EXC
Power supply bypass capacitor – 1 – µF X5R ceramic or
better
Active Mode, V
DD
= 1.8 to 5.5 V
SID9 I
DD5
Execute from flash; CPU at 6 MHz – 2.0 2.85 mA
SID12 I
DD8
Execute from flash; CPU at 12 MHz – 3.2 3.75 mA
SID16 I
DD11
Execute from flash; CPU at 16 MHz – 4.0 4.5 mA
Sleep Mode, V
DD
= 1.71 to 5.5 V
SID25 I
DD20
I
2
C wakeup, WDT on. 6 MHz – 1.1 – mA
SID25A I
DD20A
I
2
C wakeup, WDT on. 12 MHz – 1.4 – mA
Deep Sleep Mode, V
DD
= 1.8 to 3.6 V (Regulator on)
SID31 I
DD26
I
2
C wakeup and WDT on – 2.5 8.2 µA