Product manual

3-13 SanDisk miniSD Card Product Manual, Rev. 1.1 © 2003 SANDISK CORPORATION
Name Type Width CID—Slice Comments CID Value
Not used, always ‘1’ 1 [0:0]
* 3C = The 3 SDA founding companies: Toshiba, SanDisk, and MEI.
** The product revision is composed of two Binary Coded Decimal (BCD) digits, four bits each, representing an “n.m”
revision number. The “n” is the most significant nibble and the “m” is the least significant nibble. Example: The PRV
binary value filed for product revision “6.2” will be: 0110 0010.
*** The CRC Checksum is computed by the following formula:
CRC Calculation: G(x)=x7+3+1
M(x)=(MID-MSB)*x119+...+(CIN-LSB)*x0
CRC[6...0]=Remainder[(M(x)*x7)/G(x)]
3.5.3. CSD Register
The Card Specific Data (CSD) register contains configuration information required to access the card data. In Table
3-9, the cell type column defines the CSD field as Read only (R), One Time Programmable (R/W) or erasable
(R/W/E). This table shows the value in “real world” units for each field and coded according to the CSD structure.
The Model dependent column marks (with a check mark, √) the CSD fields that are model dependent. Note that the
CSD register in the miniSD Card has a different structure than the CSD in the MultiMediaCard.
Table 3-9. CSD Register
Name Field Width Cell
Type
CSD-Slice CSD Value CSD Code
CSD Structure CSD_STRUCTURE 2 R [127:126] 1.0 00b
Reserved - 6 R [125:120] - 000000b
Data Read access-time-1 TAAC 8 R [119:112] 1.5msec 00100110b
Data Read access-time-2 in CLK
cycles (NSAC*100)
NSAC 8 R [111:104] 0 00000000b
Max. Data transfer rate TRAN_SPEED 8 R [103:96] 25 Mb/sec 00110010b
Card command classes CCC 12 R [95:84] All (incl. WP,
Lock/unlock)
1F5h
Max. Read data block length READ_BL_LEN 4 R [83:80] 512byte 1001b
Partial blocks for read allowed READ_BL_PARTIAL 1 R [79:79] Yes 1b
Write block misalignment WRITE_BLK_MISALIGN 1 R [78:78] No 0b
Read block misalignment READ_BLK_MISALIGN 1 R [77:77] No 0b
DSR implemented DSR_IMP 1 R [76:76] No 0b
Reserved - 2 R [75:74] - 00b
Device size C_SIZE 12 R [73:62] SD256=3859
SD128=3843
SD064=3807
SD032=1867
SD016=899
F13h F03h
EDFh
74Bh
383h
Max. Read current @VDD min VDD_R_CURR_MIN 3 R [61:59] SD256=35 mA
SD128=35 mA
SD064=35 mA
SD032=25 mA
SD016=25 mA
SD256=101b
SD128=101b
SD064=101b
SD032=100b
SD016=100b
Max. Read current @VDD max VDD_R_CURR_MAX 3 R [58:56] SD256=45 mA
SD128=45 m
A
SD256=101b
SD128=101b