Technical data

MCIMX31C/MCIMX31LC Technical Data, Rev. 4.3
18 Freescale Semiconductor
Electrical Characteristics
The MCIMX31C I/O parameters appear in Table 13 for DDR (Double Data Rate). See Table 7, "Operating
Ranges," on page 12 for temperature and supply voltage ranges.
NOTE
NVCC for Table 13 refers to NVCC2, NVCC21, and NVCC22.
4.3.2 AC Electrical Characteristics
Figure 4 depicts the load circuit for outputs. Figure 5 depicts the output transition time waveform. The
range of operating conditions appears in Table 14 for slow general I/O, Table 15 for fast general I/O, and
Table 16 for DDR I/O (unless otherwise noted).
Figure 4. Load Circuit for Output
Figure 5. Output Transition Time Waveform
Table 13. DDR (Double Data Rate) I/O DC Electrical Parameters
Parameter Symbol Test Conditions Min Typ Max Units
High-level output voltage V
OH
I
OH
= –1 mA NVCC –0.12 — — V
I
OH
= specified Drive 0.8*NVCC — — V
Low-level output voltage V
OL
I
OL
= 1 mA — — 0.08 V
I
OL
= specified Drive — — 0.2*NVCC V
High-level output current I
OH
V
OH
=0.8*NVCC
Std Drive
High Drive
Max Drive
DDR Drive
1
1
Use of DDR Drive can result in excessive overshoot and ringing.
–3.6
–7.2
–10.8
–14.4
——mA
Low-level output current I
OL
V
OL
=0.2*NVCC
Std Drive
High Drive
Max Drive
DDR Drive
1
3.6
7.2
10.8
14.4
——mA
High-Level DC input voltage V
IH
— 0.7*NVCC NVCC NVCC+0.3 V
Low-Level DC input voltage V
IL
— –0.3 0 0.3*NVCC V
Tri-state leakage current I
OZ
V
I
= NVCC or GND
I/O = High Z
——±2 μA
Test Point
From Output
Under Test
CL
CL includes package, probe and fixture capacitance
0V
NVCC
20%
80%
80%
20%
PA 1
PA1
Output (at I/O)